bss215p Infineon Technologies Corporation, bss215p Datasheet
bss215p
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bss215p Summary of contents
Page 1
... =-1 =-16V /dt di /dt =-200A/µs, T =150 °C j,max =25 °C tot stg JESD22-A114 -HBM page 1 BSS215P - =-4.5 V 150 DS(on),max GS V =-2.5 V 280 GS -1.5 PG-SOT23 Marking Lead Free Packing YDs Yes Non dry Value -1.5 -1. ± ...
Page 2
... V =-20V, V =0V =150 ° =-12V, V =0V GSS =2 DS(on) I =-1 =4 =-1 |>2 DS(on)max =1. page 2 BSS215P Values Unit min. typ. max 250 K/W - -1.2 -0.9 -0.6 µ -100 - - -100 nA - 166 280 mΩ - 105 150 , - 4 2010-03-29 ...
Page 3
... -4 plateau =25 ° S,pulse =-1 =25 ° = =-1 /dt =100 A/µ page 3 BSS215P Values Unit min. typ. max. - 260 346 pF - 102 135 - 85 128 - - ...
Page 4
... A 4 Max. transient thermal impedance Z =f(t thJA p parameter µs 10 µs 100 µ [V] DS page 4 BSS215P ≤-4 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] ...
Page 5
... V 100 1 [ Typ. forward transconductance g =f ° [V] GS page 5 BSS215P ); T =25 ° 1 2.3 V 2 [A] D =25 ° [ 2010-03-29 ...
Page 6
... Forward characteristics of reverse diode =25° parameter Ciss Coss Crss - [V] DS page 6 BSS215P ); =-11 µ typ 100 140 T [° 150 °C, 98% 150 °C 25 °C, 98% 25 °C 0.4 0.8 1.2 ...
Page 7
... °C 3 100 °C 2 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSS215P ); I =-1.5 A pulsed [nC] gate ate 2010-03-29 ...
Page 8
... Package Outline: Footprint: Rev 2.2 SOT23 Packaging: page 8 BSS215P 2010-03-29 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 BSS215P 2010-03-29 ...