bss215p Infineon Technologies Corporation, bss215p Datasheet - Page 6

• Manufacturer Part Number: bss215p
• Description: Optimos
• Manufacturer: Infineon Technologies Corporation

Rev 2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
240
200
160
120
10
10
10
80
40
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=-1.5 A; V
5
20
98 %
GS
V
T
=-4.5 V
DS
j
60
10
[°C]
typ
[V]
j
Ciss
Coss
=25°C
Crss
100
15
140
180
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
1.6
1.2
0.8
0.4
10
10
=f(T
SD
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
150 °C
GS
25 °C
; I
20
D
=-11 µA
T
V
j
SD
60
2 %
0.8
[°C]
98 %
typ
[V]
25 °C, 98%
100
150 °C, 98%
1.2
BSS215P
140
2010-03-29
180
1.6