mt58l512v18p ETC-unknow, mt58l512v18p Datasheet - Page 21

• Manufacturer Part Number: mt58l512v18p
• Description: 512k 256k 32/36 Pipelined, Syncburst Sram
• Manufacturer: ETC-unknow

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
Outputs (Q)
ALL INPUTS
(except ZZ)
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ
V
IH
21
PIPELINED, SCD SYNCBURST SRAM
High-Z
causes the device to enter SNOOZE MODE. When ZZ
becomes a logic HIGH, I
setup time
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed.
ZZ is an asynchronous, active HIGH input that
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
I
t
t
RZZI
SB
t
RZZ
ZZI
ZZ
2Z
t
ZZ is met. Any READ or WRITE operation
2(
MIN
t
0
KC)
DESELECT or READ Only
t
RZZI
SB
2(
2(
2
MAX
Z
10
t
t
KC)
KC)
is guaranteed after the
t
RZZ
UNITS
©2002, Micron Technology, Inc.
mA
ns
ns
ns
ns
DON’T CARE
NOTES
1
1
1
1