k6r1008c1a-c Samsung Semiconductor, Inc., k6r1008c1a-c Datasheet - Page 3

• Manufacturer Part Number: k6r1008c1a-c
• Description: 128kx8 High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

CAPACITANCE*
* Capacitance is sampled and not 100% tested.
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
** V
K6R1008C1A-C, K6R1008C1A-I
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The above parameters are also guaranteed at industrial temperature range.
CC
IL
IH
=5.0V 5%, Temp.=25 C
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
CC
+ 2.0V a.c (Pulse Width 10ns) for I
Supply Relative to V
Item
Parameter
(T
A
=25 C, f=1.0MHz)
Commercial
Industrial
10ns) for I
SS
Symbol
V
SS
I
V
V
OH1
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
Symbol
**
V
V
V
V
CC
SS
IH
IL
20mA.
Symbol
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
C
IN
OUT
IN
C
I/O
=8mA
=-4mA
IN
=V
20mA.
=0mA
=-0.1mA
V
=V
CC
SS
IH
IL,
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
V
Symbol
-0.5**
IH
IN
Min
CC
4.5
2.2
Test Conditions
T
V
0
(T
CC
, V
P
T
T
STG
or V
- 3 -
IH
CC
Test Conditions
D
A
A
IH
A
-0.2V,
IN
OUT
or WE=V
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
IL,
0.2V
V
V
I/O
IN
(
T
=0V
=0V
A
=0 to 70 C)
IL
Typ
5.0
0
-
-
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
-40 to 85
12ns
15ns
20ns
Rating
0 to 70
1.0
MIN
-
-
V
CC
Min
2.4
Max
-2
-2
5.5
+ 0.5***
0.8
-
-
-
-
-
-
-
0
CMOS SRAM
Max
8
6
PRELIMINARY
Max
3.95
170
165
160
0.4
25
2
2
8
-
February 1998
Unit
W
V
V
C
C
C
Unit
V
V
V
V
Unit
pF
pF
Rev 4.0
Unit
mA
mA
mA
V
V
V
A
A