gvt7164b18 Cypress Semiconductor Corporation., gvt7164b18 Datasheet - Page 8

• Manufacturer Part Number: gvt7164b18
• Description: 64k X 18 Synchronous Burst Sram Semiconductor
• Manufacturer: Cypress Semiconductor Corporation.

Switching Characteristics
Document #: 38-05204 Rev. *A
Notes:
21. Overshoot: VIH(AC) <VDD + 1.5V for t <tTCYC/2; undershoot: VIL(AC) < 0.5V for t <tTCYC/2; power-up: VIH < 2.6V and VDD <2.4V and VDDQ < 1.4V for
22. Capacitance derating applies to capacitance different from the load capacitance shown in part (a) of AC Test Loads. Values in table are associated with the
23. Test conditions as specified with the output loading as shown in part (a) of AC Test Loads unless otherwise noted.
24. Output loading is specified with C
25. At any given temperature and voltage condition, t
26. OE is a “don’t care” when a byte Write enable is sampled LOW.
27. This is a synchronous device. All synchronous inputs must meet specified set-up and hold time, except for “don’t care” as defined in the truth table.
Parameter
t<200 ms.)
operating frequencies listed.
L
= 5 pF as in AC Test Loads.
Over the Operating Range
Description
KQHZ
is less than t
KQLZ
[23]
and t
OEHZ
is less than t
Min.
66 MHz
-9
OELZ
Max.
.
Min.
50 MHz
-10
Max.
Min.
GVT7164B18
CY7C1297A/
50 MHz
-12
Max.
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Unit