k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet - Page 6

• Manufacturer Part Number: k6r4008v1b-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
V
Current
Address
Data Out
Address
CS
OE
Data out
CC
Parameter
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
4. At any given temperature and voltage condition, t
5. Transition is measured 200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
V
device.
HZ
OL
and t
levels.
I
I
CC
SB
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
WHZ
t
t
WP1
t
WC
CW
WR
DW
OW
AW
WP
DH
AS
t
PU
t
LZ(4,5)
(Address Controlled
(WE=V
t
K6R4008V1B-10
OLZ
t
Min
OH
10
10
50%
7
0
7
7
0
0
5
0
3
IL.
t
AA
IH
)
t
CO
- 6 -
t
OE
HZ
t
AA
(Max.) is less than t
Max
5
-
-
-
-
-
-
-
-
-
-
,
CS=OE=V
t
RC
t
RC
K6R4008V1B-12
Min
12
12
IL
8
0
8
8
0
0
6
0
3
, WE=V
LZ
(Min.) both for a given device and from device to
Valid Data
IH
)
Max
6
-
-
-
-
-
-
-
-
-
-
t
OHZ
Valid Data
K6R4008V1B-15
Min
15
10
10
10
15
CMOS SRAM
0
0
0
7
0
3
50%
t
t
t
PD
HZ(3,4,5)
OH
PRELIMINARY
Max
7
-
-
-
-
-
-
-
-
-
-
May 1999
Rev 2.2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OH
or