k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet - Page 8

• Manufacturer Part Number: k6r4008v1b-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
FUNCTIONAL DESCRIPTION
* X means Don t Care.
DATA RETENTION WAVE FORM
Data Retention Characteristic is for L-ver only.
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
CC
CS controlled
CS
H
L
L
L
for Data Retention
V
3.0V
V
V
CS
GND
CC
IH
DR
Parameter
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;
3. t
4. t
5. t
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
WE
X
H
H
L
A write ends at the earliest transition CS going high or WE going high. t
write.
of the output must not be applied because bus contention can occur.
applied.
CW
AS
WR
is measured from the address valid to the beginning of write.
is measured from the later of CS going low to end of write.
is measured from the end of write to the address change. t
OE
X*
H
X
L
Symbol
t
SDR
t
t
V
I
RDR
SDR
DR
Output Disable
DR
Not Select
Mode
Read
Write
(T
CS
V
V
V
V
See Data Retention
Wave form(below)
CC
IN
CC
IN
A
=0 to 70 C)
=3.0V, CS V
- 8 -
V
= 2.0V, CS V
V
V
CC
CC
CC
Data Retention Mode
Test Condition
- 0.2V or V
- 0.2V or V
- 0.2V
CS V
WR
CC
CC
CC
applied in case a write ends as CS or WE going high.
IN
IN
- 0.2V
- 0.2V
- 0.2V
0.2V
0.2V
WP
I/O Pin
High-Z
High-Z
D
D
is measured from the beginning of write to the end of
OUT
IN
Min.
2.0
0
5
-
-
CMOS SRAM
Typ.
t
RDR
-
-
-
-
-
Supply Current
PRELIMINARY
I
SB
I
I
I
Max.
, I
CC
CC
CC
3.6
1.0
0.7
-
-
SB1
May 1999
Rev 2.2
Unit
mA
mA
ms
ns
V