k6r4008c1c-e Samsung Semiconductor, Inc., k6r4008c1c-e Datasheet - Page 4

• Manufacturer Part Number: k6r4008c1c-e
• Description: 512kx8 Bit High Speed Static Ram 5v Operating . Operated At Extended And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at extended and industrial temperature range.
CC
IL
IH
=5.0V 5%, Temp.=25 C.
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
+ 2.0V a.c (Pulse Width
Item
(T
A
=25 C, f=1.0MHz)
8ns) for I
Symbol
V
V
I
V
I
OH1**
I
I
SB1
I
LO
CC
SB
OH
LI
OL
8ns) for I
20mA.
Symbol
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OL
OH
OH1
Symbol
IN
OUT
IN
V
V
V
V
=8mA
C
=V
=-4mA
C
CC
SS
IH
IL
=-0.1mA
20mA.
V
I/O
IN
=V
SS
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
IH
CC
CC
or V
IH
-0.2V,
(T
IH
- 4 -
IN
or WE=V
-0.5**
Test Conditions
A
Min
4.5
2.2
Test Conditions
IL,
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
0.2V
0
I
OUT
V
V
(T
I/O
IN
=0mA
=0V
A
=0V
IL
=0 to 70 C)
Typ
5.0
Com.
0
-
-
Ext.
Ind.
MIN
-
-
10ns
12ns
15ns
10ns
12ns
15ns
V
CC
Max
5.5
+0.5***
0.8
0
Min
Max
2.4
-2
-2
-
-
-
-
-
-
-
-
-
-
8
7
PRELIMINARY
September 2001
Max
3.95
170
160
150
185
175
165
0.4
60
10
2
2
-
Unit
V
V
V
V
Unit
pF
pF
Rev 4.0
Unit
mA
mA
mA
V
V
V
A
A