k6r4008c1c-e Samsung Semiconductor, Inc., k6r4008c1c-e Datasheet - Page 5

• Manufacturer Part Number: k6r4008c1c-e
• Description: 512kx8 Bit High Speed Static Ram 5v Operating . Operated At Extended And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
TEST CONDITIONS*
* The above test conditions are also applied at extended and industrial temperature range.
D
READ CYCLE*
* The above parameters are also guaranteed at extended and industrial temperature range.
Output Loads(A)
* Capacitive Load consists of all components of the
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
OUT
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
R
=0 to 70 C, V
L
Symbol
= 50
t
t
t
t
t
t
t
t
OHZ
t
t
t
OLZ
RC
CO
OE
OH
PU
PD
AA
LZ
HZ
30pF*
V
L
K6R4008C1C-10
CC
Min
10
= 1.5V
3
0
0
0
3
0
-
-
-
-
=5.0V 10%, unless otherwise noted.)
- 5 -
Max
10
10
10
5
5
5
-
-
-
-
-
Output Loads(B)
for t
HZ
* Including Scope and Jig Capacitance
, t
LZ
K6R4008C1C-12
Min
, t
12
3
0
0
0
3
0
-
-
-
-
WHZ
, t
OW
D
255
OUT
, t
Max
OLZ
12
12
12
6
6
6
-
-
-
-
-
See below
0V to 3V
& t
Value
1.5V
3ns
OHZ
K6R4008C1C-15
Min
15
3
0
0
0
3
0
-
-
-
-
PRELIMINARY
+5.0V
480
5pF*
Max
September 2001
15
15
15
7
7
7
-
-
-
-
-
Rev 4.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns