k6r4004c1d Samsung Semiconductor, Inc., k6r4004c1d Datasheet - Page 5

• Manufacturer Part Number: k6r4004c1d
• Description: 1m X 4 Bit High-speed Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
K6R4004C1D
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
D
Output Loads(A)
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50Ω
Parameter
(T
A
=0 to 70°C, V
Symbol
t
t
R
t
t
t
t
t
t
OHZ
t
t
t
OLZ
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
L
= 50Ω
30pF*
CC
V
L
=5.0V±10%, unless otherwise noted.)
= 1.5V
- 5 -
Min
10
3
0
0
0
3
0
-
-
-
-
Output Loads(B)
for t
HZ
, t
K6R4004C1D-10
LZ
* Including Scope and Jig Capacitance
, t
WHZ
, t
OW
D
255Ω
OUT
, t
OLZ
See below
0V to 3V
& t
Value
1.5V
3ns
OHZ
Max
10
10
10
5
5
5
-
-
-
-
-
PRELIMINARY
CMOS SRAM
+5.0V
480Ω
5pF*
July 2004
Rev. 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns