k6f2008v2e Samsung Semiconductor, Inc., k6f2008v2e Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
k6f2008v2e
Manufacturer Part Number
k6f2008v2e
Description
256kx8 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K6F2008V2E.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k6f2008v2e-LF55
Manufacturer:
SAM
Quantity:
2 000
Company:
Part Number:
k6f2008v2e-LF55
Manufacturer:
SAMSUNG
Quantity:
2 148
Company:
Part Number:
k6f2008v2e-LF70
Manufacturer:
SAM
Quantity:
2 000
Company:
Part Number:
k6f2008v2e-LF70
Manufacturer:
SAMSUNG
Quantity:
11 080
Company:
Part Number:
k6f2008v2e-LF70
Manufacturer:
FUJI
Quantity:
25
K6F2008V2E Family
PIN DESCRIPTION
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 3.0 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
K6F2008V2E-F
Product Family
CS
A
Name
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
WE
OE
1
~A
VCC
, CS
CS2
A13
A15
A17
A14
A12
A11
A16
WE
A9
A7
A6
A5
A4
A8
17
2
Chip Select Input
Output Enable
Write Enable Input
Address Inputs
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Function
Operating Temperature
Industrial(-40~85 C)
Type1-Forward
32-sTSOP
CC
I/O
=3.3V, T
Name
DNU
Vcc
Vss
1
~I/O
8
A
=25 C and not 100% tested.
Data Inputs/Outputs
Power
Ground
Do Not Use
Vcc Range
Function
3.0~3.6V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Speed(ns)
55
1)
/70ns
2
GENERAL DESCRIPTION
advanced Full CMOS process technology. The families support
industrial temperature ranges for user flexibility of system
design. The families also supports low data retention voltage for
battery back-up operation with low data retention current.
FUNCTIONAL BLOCK DIAGRAM
The K6F2008V2E families are fabricated by SAMSUNG s
CS1
CS2
WE
OE
I/O
I/O
1
8
(I
Standby
SB1
Control
logic
0.5 A
Power Dissipation
, Typ)
2)
Clk gen.
(I
Operating
CC1
Data
cont
Data
cont
Row
select
3mA
, Max)
32-TSOP1-0813.4F
32-TSOP1-0813.4F(LF)
CMOS SRAM
Precharge circuit.
Memory array
1024 rows
256x8 columns
Column select
Address
I/O Circuit
PKG Type
Revision 1.1
May 2003