k6f2008v2e Samsung Semiconductor, Inc., k6f2008v2e Datasheet - Page 5

• Manufacturer Part Number: k6f2008v2e
• Description: 256kx8 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2008V2E Family
AC CHARACTERISTICS
1. The parameter is measured with 30pF test load.
DATA RETENTION CHARACTERISTICS
1. CS
2. Typical values are measured at T
AC OPERATING CONDITIONS
TEST CONDITIONS
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
1
Vcc-0.2V, CS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Item
2
Parameter List
Vcc-0.2V(CS
(Test Load and Test Input/Output Reference)
C
L
L
=100pF+1TTL
=30pF+1TTL
A
1
=25 C and not 100% tested.
controlled) or CS
(Vcc=3.0~3.6V, T
Symbol
t
t
V
I
SDR
RDR
DR
DR
2
CS
Vcc=1.5V, CS
See data retention waveform
0.2V(CS
1
Vcc-0.2V
A
=-40 to 85 C)
2
Symbol
controlled).
Test Condition
t
t
t
t
t
t
t
t
t
t
t
t
t
OHZ
t
WHZ
t
t
t
OLZ
t
t
OW
CO
OH
WC
CW
AW
WP
WR
DW
RC
AA
OE
HZ
AS
DH
LZ
1
1)
Vcc-0.2V
5
Min
1)
55
10
10
55
45
45
40
25
5
0
0
0
0
0
0
5
-
-
-
55ns
1. Including scope and jig capacitance
2. R
3. V
1)
Max
1
TM
55
55
25
20
20
20
=3070
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Speed Bins
1.5
t
=2.8V
RC
C
0
-
L
1)
,
R
2
=3150
Min
0.2
70
10
10
70
60
60
50
30
Typ
5
0
0
0
0
0
0
5
-
-
-
-
-
-
V
2)
TM
CMOS SRAM
70ns
R
R
3)
1
2
2)
3)
Max
Max
3.6
70
70
35
25
25
20
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Revision 1.1
May 2003
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
A