upa2794agr Renesas Electronics Corporation., upa2794agr Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa2794agr
Manufacturer Part Number
upa2794agr
Description
Switching N- And P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2794AGR.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2794agr-E1-AZ
Manufacturer:
NEC
Quantity:
20 000
6
50
40
30
20
10
0
40
35
30
25
20
15
10
3
2
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
0
-50
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1
V
I
Pulsed
D
DS
= 1 mA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 10 V
V
T
DS
ch
0.5
10 V
- Channel Temperature - °C
- Drain to Source Voltage - V
V
0
GS
I
D
= 4.5 V
- Drain Current - A
10 V
V
1
50
10
GS
= 4.5 V
1.5
100
Pulsed
Data Sheet G19922EJ1V0DS
150
100
2
0.001
100
0.01
0.1
100
10
50
40
30
20
10
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
1
0
1
0.1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
0
T
ch
V
V
= −55°C
GS
GS
T
1
−25°C
ch
5
- Gate to Source Voltage - V
- Gate to Source Voltage - V
= −55°C
I
D
−25°C
1
- Drain Current - A
125°C
150°C
25°C
75°C
2
10
μ
3
PA2794AGR
10
125°C
150°C
25°C
75°C
V
Pulsed
V
Pulsed
15
DS
I
Pulsed
DS
D
4
= 10 V
= 2.8 A
= 10 V
100
20
5