upa2793agr Renesas Electronics Corporation., upa2793agr Datasheet - Page 4

• Manufacturer Part Number: upa2793agr
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

P-channel
Note Pulsed
4
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
I
CHARACTERISTICS
PG.
G
V
= −2 mA
50 Ω
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
DS
L
DD
Note
L
V
ch
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
|
Data Sheet G19921EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
I
V
V
I
I
di/dt = −50 A/
V
D
F
F
0
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
GS
= 7 A, V
= −7 A, V
= −7 A,
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 0 Ω
(−)
= −40 V, V
= m20 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −4.5 V, I
= −10 V,
= 0 V,
= −20 V, I
= −10 V,
= −32 V,
= −10 V
TEST CIRCUIT 2 SWITCHING TIME
μ
τ
TEST CONDITIONS
GS
GS
= 0 V
μ
D
D
D
D
R
= 0 V,
D
GS
DS
s
= −1 mA
= −3.5 A
G
= −3.5 A
= −3.5 A,
= −3.5 A
= 0 V
= 0 V
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
−1.0
5
V
V
V
GS
DS
0
DS
0
(−)
(−)
TYP.
2200
−1.7
0.84
10%
t
μ
350
260
150
5.2
90%
d(on)
11
21
24
10
18
26
45
12
54
25
PA2793AGR
t
on
10%
MAX.
t
−2.5
−10
m10
r
1.5
26
36
V
GS
t
10%
d(off)
t
UNIT
off
mΩ
mΩ
90%
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
90%
t
f