upa2792agr Renesas Electronics Corporation., upa2792agr Datasheet - Page 3

• Manufacturer Part Number: upa2792agr
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

Document No. G19920EJ1V0DS00 (1st edition)
Date Published August 2009 NS
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application.
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
EQUIVALENT CIRCUITS
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
• Low on-state resistance
Gate
Gate
Protection
Diode
N-channel C
P-channel C
The
N-channel R
P-channel R
μ
μ
PA2792AGR-E1-AT
PA2792AGR-E2-AT
μ
N-channel
PART NUMBER
PA2792AGR is N- and P-channel MOS Field Effect
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Source
Drain
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
iss
iss
= 2200 pF TYP.
= 2200 pF TYP.
Body
Diode
= 12.5 mΩ MAX. (V
= 21 mΩ MAX. (V
= 18 mΩ MAX. (V
= 26 mΩ MAX. (V
Note
Note
N- AND P-CHANNEL POWER MOS FET
LEAD PLATING
Gate
Gate
Protection
Diode
Pure Sn
GS
GS
GS
GS
= −10 V, I
= −4.5 V, I
= 4.5 V, I
P-channel
= 10 V, I
DATA SHEET
Source
Drain
SWITCHING
D
D
D
D
= 5 A)
= −5 A)
= −5 A)
= 5 A)
Body
Diode
Tape 2500 p/reel
MOS FIELD EFFECT TRANSISTOR
PACKING
μ
8
1
PACKAGE DRAWING (Unit: mm)
5.37 MAX.
PA2792AGR
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
Power SOP8
PACKAGE
0.12 M
N-channel
P-channel
0.5 ±0.2
6.0 ±0.3
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
4.4
: Source 1
: Gate 1
: Source 2
: Gate 2
0.8
2009
0.10