upa2352t1p Renesas Electronics Corporation., upa2352t1p Datasheet - Page 4
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upa2352t1p
Manufacturer Part Number
upa2352t1p
Description
Dual Nch Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2352T1P.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2352t1p-E4-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
4
0.01
100
120
100
0.1
10
80
60
40
20
0
1
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
R
(V
I
Single Pulse
Mounted on BT resin board of
40.5 mm × 25 mm × 1.5 mm
P
S(DC)
SS(on)
D
GS
(FET1) : P
V
= 4.5 V)
25
Limited
SS
T
A
- Source to Source Voltage - V
- Ambient Temperature - °C
1000
100
50
D
10
(FET2) = 1 : 1
1
1
1 m
75
Single Pulse
P
D
(FET1) : P
100 125 150 175
I
S(pulse)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
10
D
A
(FET2) = 1 : 1
= 25°C)
PW = 10 μs
100 μs
1 ms
10 ms
100 ms
DC
100 m
100
Data Sheet G19741EJ1V0DS
PW - Pulse Width - s
Mounted on BT resin board of
40.5 mm × 25 mm × 1.5 mm
Mounted on ceramic board of
50 cm
1
2
× 1.0 mm
1.0
0.8
0.6
0.4
0.2
0.0
10
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - °C
100
50
Mounted on BT resin board of
40.5 mm x 25 mm x 1.5 mm
75
100
1000
125
μ
PA2352T1P
150
175