hmc520 Hittite Microwave Corporation, hmc520 Datasheet

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hmc520

Manufacturer Part Number
hmc520
Description
Gaas Mmic I/q Mixer / Irm Chip, 6 - 10 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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3 - 66
3
Typical Applications
The HMC520 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
• C-Band VSAT
• Military Radar and ECM
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF/LO
Frequency Range, IF
Conversion Loss (As IRM)
Image Rejection
1 dB Compression (Input)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
* Unless otherwise noted, all measurements performed as downconverter.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v01.1007
= +25° C, IF= 100 MHz, LO = +15 dBm*
Order On-line at www.hittite.com
Min.
20
35
16
DC - 3.5
6 - 10
Typ.
+22
+12
0.3
40
45
22
7
4
Features
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 40 dB
LO to RF Isolation: 45 dB
High Input IP3: +22 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
General Description
The HMC520 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fi xture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Max.
10
Min.
30
40
17
GaAs MMIC I/Q MIXER
DC - 3.5
7.1 - 8.5
Typ.
+12
+23
0.1
40
50
22
7
3
HMC520
Max.
9
6 - 10 GHz
Units
GHz
GHz
dBm
dBm
Deg
dB
dB
dB
dB
dB

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hmc520 Summary of contents

Page 1

... Isolation High Input IP3: +22 dBm Die Size: 1.49 x 1.14 x 0.1 mm General Description The HMC520 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process ...

Page 2

... Input IP3 vs. LO Drive Order On-line at www.hittite.com HMC520 GHz +25C +85C -55C FREQUENCY (GHz FREQUENCY (GHz +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm ...

Page 3

... Rejection vs. LO Drive 0 -10 -20 - +11 dBm LO = +13 dBm LO = +15 dBm - +17 dBm LO = +19 dBm -50 - Order On-line at www.hittite.com HMC520 GaAs MMIC I/Q MIXER GHz RETURN LOSS CONVERSION GAIN 0.5 1 1 FREQUENCY (GHz +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm 5 6 ...

Page 4

... All values in dBc below IF power level ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information Standard GP-2 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Order On-line at www.hittite.com HMC520 GHz nLO ...

Page 5

... IF frequency range. For operation to DC, this pad must not source/sink more than 3mA of current or die non-function and possible die failure will result. Pads 5 and 6 are alternate IF ports. The backside of the die must be connected to RF/DC ground. Order On-line at www.hittite.com HMC520 GaAs MMIC I/Q MIXER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm (0.003”) 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC520 GHz Wire Bond 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond RF Ground Plane 0.254mm (0.010” ...

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