hmc566lp4e Hittite Microwave Corporation, hmc566lp4e Datasheet - Page 3

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hmc566lp4e

Manufacturer Part Number
hmc566lp4e
Description
Gaas Phemt Mmic Low Noise Amplifier, 28 - 36 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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8 - 192
8
P1dB vs. Temperature
Output IP3 vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
30
27
24
21
18
15
12
18
16
14
12
10
30
28
26
24
22
20
18
16
14
9
6
3
0
8
6
4
2.5
26
26
28
28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Gain
P1dB
30
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Vdd (V)
3
32
32
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
34
34
Noise Figure
v02.0609
Order On-line at www.hittite.com
36
36
3.5
10
9
8
7
6
5
4
3
2
1
0
38
38
Psat vs. Temperature
Power Compression @ 32 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
GaAs pHEMT MMIC LOW NOISE
18
16
14
12
10
25
20
15
10
8
6
4
5
0
-20
26
-18
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
28
-16
AMPLIFIER, 28 - 36 GHz
Pout
Gain
PAE
-14
30
INPUT POWER (dBm)
FREQUENCY (GHz)
-12
HMC566LP4E
32
-10
+25 C
+85 C
- 40 C
34
-8
+3.5 V
+5 dBm
175 °C
0.8 W
104 °C/W
-65 to +150 °C
-40 to +85 °C
-6
36
-4
38
-2

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