k7a803600m Samsung Semiconductor, Inc., k7a803600m Datasheet - Page 9

• Manufacturer Part Number: k7a803600m
• Description: 256kx36 & 512kx18 Synchronous Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7A803600M
K7A801800M
PASS-THROUGH TRUTH TABLE
Note : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
OPERATING CONDITIONS at 3.3V I/O
OPERATING CONDITIONS at 2.5V I/O
CAPACITANCE*
*Note : Sampled not 100% tested.
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Voltage on I/O Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Write Cycle, All bytes
Address=An-1, Data=Dn-1
Write Cycle, All bytes
Address=An-1, Data=Dn-1
Write Cycle, All bytes
Address=An-1, Data=Dn-1
Write Cycle, One byte
Address=An-1, Data=Dn-1
Write Cycle, One byte
Address=An-1, Data=Dn-1
Supply Voltage
Ground
Supply Voltage
Ground
Input Capacitance
Output Capacitance
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATION
PARAMETER
PARAMETER
PARAMETER
PREVIOUS CYCLE
DD
DDQ
Supply Relative to V
Supply Relative to V
(T
PARAMETER
A
=25 C, f=1MHz)
SS
WRITE
SS
One L
One L
All L
All L
All L
SS
SS
SYMBOL
SYMBOL
SYMBOL
V
V
C
V
V
V
V
C
DDQ
DDQ
OUT
Initiate Read Cycle
Address=An
Data=Qn-1 for all bytes
No new cycle
Data=Qn-1 for all bytes
No new cycle
Data=High-Z
Initiate Read Cycle
Address=An
Data=Qn-1 for one byte
No new cycle
Data=Qn-1 for one byte
DD
SS
DD
SS
IN
OPERATION
(0 C
(0 C
256Kx36 & 512Kx18 Synchronous SRAM
TEST CONDITION
3.135
3.135
3.135
2.375
MIN
MIN
V
T
T
PRESENT CYCLE
0
0
V
OUT
A
A
- 9 -
IN
=0V
=0V
70 C)
70 C)
SYMBOL
V
T
T
T
V
V
V
P
BIAS
DDQ
STG
OPR
DD
IN
IO
D
CS
H
H
H
L
L
Typ.
Typ.
3.3
3.3
3.3
2.5
1
0
0
WRITE
MIN
-
-
H
H
H
H
H
-0.3 to V
-0.3 to 4.6
-0.3 to 4.6
-65 to 150
-10 to 85
RATING
OE
0 to 70
H
L
L
L
L
V
1.6
DD
3.465
3.465
3.465
DDQ
MAX
MAX
2.9
0
0
Read Cycle
Data=Qn
No carryover from
previous cycle
No carryover from
previous cycle
Read Cycle
Data=Qn
No carryover from
previous cycle
MAX
+0.5
6
8
NEXT CYCLE
UNIT
UNIT
March 2000
UNIT
UNIT
V
V
V
V
V
V
pF
pF
W
V
V
V
V
C
C
C
Rev 6.0