k4x56323pg Samsung Semiconductor, Inc., k4x56323pg Datasheet - Page 9

• Manufacturer Part Number: k4x56323pg
• Description: 8m X32 Mobile-ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Internal Temperature Compensated Self Refresh (TCSR)
Partial Array Self Refresh (PASR)
K4X56323PG - 7(8)E/G
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.
Temperature Range
BA1=0
BA0=0
BA1=1
BA0=0
45 °C
- Full Array
85 °C
*3
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
200
450
Figure.4 EMRS code and TCSR , PASR
1/2 Array
BA1=0
BA0=0
BA1=1
BA0=0
160
300
- E
- 1/2 Array
Self Refresh Current (IDD6)
1/4 Array
BA1=0
BA0=1
BA1=1
BA0=1
140
250
Full Array
150
300
1/2 Array
Mobile-DDR SDRAM
BA1=0
BA0=0
BA1=1
BA0=0
135
250
- G
- 1/4 Array
Partial Self Refresh Area
1/4 Array
BA1=0
BA0=1
BA1=1
BA0=1
130
225
January 2006
Unit
uA