k4x56163pe-lg Samsung Semiconductor, Inc., k4x56163pe-lg Datasheet - Page 9

• Manufacturer Part Number: k4x56163pe-lg
• Description: 16m X16 Mobile Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Partial Array Self Refresh (PASR )
K4X56163PE-L(F)G
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full Array, 1/2 Array, 1/4 Array.
self refresh cycle automatically according to the two temperature range ; Max. 40 C, Max. 85 C.
Temperature Range
Max. 40 C
Max. 85 C
BA1=0
BA0=0
BA1=1
BA0=0
- Full Array
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
Figure.3 EMRS code and TCSR , PASR
150
400
BA1=0
BA0=0
BA1=1
BA0=0
- 1/2 Array
Self Refresh Current (Icc 6)
BA1=0
BA0=1
BA1=1
BA0=1
9
1/2 Array
125
300
Mobile-DDR SDRAM
BA1=0
BA0=0
BA1=1
BA0=0
1/4 Array
- 1/4 Array
250
115
Partial Self Refresh Area
BA1=0
BA0=1
BA1=1
BA0=1
March 2004
Unit
uA