STT800GK12PT SIRECTIFIER [Sirectifier Semiconductors], STT800GK12PT Datasheet
STT800GK12PT
Manufacturer Part Number
STT800GK12PT
Description
Thyristor-Thyristor Modules
Manufacturer
SIRECTIFIER [Sirectifier Semiconductors]
Datasheet
1.STT800GK12PT.pdf
(4 pages)
Symbol
(dv/dt)
(di/dt)
Weight
I
I
I
V
V
V
V
V
V
P
T
TAV
TRMS
P
TSM
I
T
T
M
2
DRM,
RRM
DSM,
RSM
RGM
ISOL
GAV
VJM
GM
stg
VJ
t
d
P1 ©2009 Sirectifier Electronics Technology Corp.
cr
cr
T
T
T
180
180
T =25
T
T
T
f=50Hz, t
V
I
di
T
R
T
T
50/60Hz, RMS
I
Mounting torque (M6)
Terminal connection torque (M8)
Typ.
T =25
T
T
G
ISOL
C
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
D
GK
=1A
G
=85
=85
=2/3V
/dt=1A/us
=T
=T
=T
=T
=T
=T
=T
=T
=T
o
o
=
<1mA
_
half sine wave,50HZ ;single pulse,Gate open
half sine wave,50HZ ;Gate open
VJM
VJM
VJM
VJM
VJM
VJM
VJM
VJM
o
VJM
o
o
C; 180
o
C; 180
C
C
; method 1 (linear voltage rise)
DRM
p
;
=200us
180
1us rise time,500us
Gate pulse;20V,5W
V
R
o
o
=0;
half sine wave,50HZ
Full cycle sine wave,50HZ
o
half sine wave,50HZ single pulse;
Test Conditions
Type
STT800GK08PT
STT800GK12PT
STT800GK14PT
STT800GK16PT
STT800GK18PT
Thyristor-Thyristor Modules
t=1s
STT800GK
non repetitive, I
repetitive, I
V
t=1min
DR
=2/3V
DRM
T
=960A
T
=I
V
V
1300
1500
1700
1900
900
TAVM
RSM
DSM
V
V
V
XX
1200
1400
1600
1800
800
RRM
DRM
V
PT
Colerance:+0.5mm
Dimensions in mm (1mm=0.0394")
Maximum Ratings
11-13/97-115
4.5-7/40-60
1000/1800
-40...+140
-40...+125
1100/1900
1256
4500
6125
1000
3000
3600
30.0
35.0
200
40
140
3249
800
100
6
5
-
www.sirectifier.com
Nm/lb.in.
Unit
A/us
V/us
A
V~
o
W
W
A
A
V
A
g
C
2
s
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STT800GK12PT Summary of contents
Page 1
... Thyristor-Thyristor Modules Type STT800GK08PT STT800GK12PT STT800GK14PT STT800GK16PT STT800GK18PT Symbol Test Conditions =85 C; 180 half sine wave,50HZ TAV =85 C; 180 Full cycle sine wave,50HZ TRMS 180 half sine wave,50HZ single pulse; VJ VJM I TSM o V = Gate pulse ...
Page 2
Thyristor-Thyristor Modules Symbol Test Conditions RRM VJ VJM R RRM =1200A For power-loss calculations only ( =12V ; T D ...
Page 3
STT800GK Thyristor-Thyristor Modules Tj=25 C Tj=Tj 10000 8000 6000 4000 2000 0 0 0 Forward Voltage Fig 1 On-state characteristics 1500 1000 500 o . -angle of conduction Rectangular current waveforms 0 50 ...
Page 4
STT800GK Thyristor-Thyristor Modules 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 Time Fig 6 Transient thermal impedance junction to case Z thjc P4 ©2009 Sirectifier ...