BTB35 SIRECTIFIER [Sirectifier Semiconductors], BTB35 Datasheet
BTB35
Manufacturer Part Number
BTB35
Description
Discrete Triacs(Non-Isolated/Isolated)
Manufacturer
SIRECTIFIER [Sirectifier Semiconductors]
Datasheet
1.BTB35.pdf
(2 pages)
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
V
(dI/dt)c (2) Without snubber
dV/dt (2)
DSM
Symbol
I
Symbol
I
GT
P
I
T(RMS)
V
V
H
I
dI/dt
G(AV)
T
I
TSM
I
GD
GT
GM
L
I
T
(2)
stg
²
/V
(1)
t
j
RSM
V
V
I
I
V
T
G
D
D
D
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
²
G
= 500 mA
= 1.2 I
t Value for fusing
= 12 V
= V
= 67 % V
G
= 2 x I
DRM
GT
GT
T2
Test Conditions
T1
R
DRM
, tr < 100 ns
Discrete Triacs(Non-Isolated/Isolated)
L
R
= 3.3 k
L
T1
_
T2
= 33
G
gate open Tj = 125°C
Tj = 125°C
Tj = 125°C
BTB/BTA35
Dimensions TO-247AD
Parameter
Quadrant
I - II - III
I - III-IV
ALL
ALL
IV
II
F = 120 Hz
TO-247AD
tp = 10 ms
tp = 20 µs
F = 60 Hz
F = 50 Hz
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
tp = 10 ms
Tc = 80 °C
t = 16.7 ms
Tj = 125°C
Tj = 125°C
Tj = 125°C
t = 20 ms
Tj = 25°C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
Value
3.55
4.32
1.65
10.8
Min.
Millimeter
100
120
5.4
1.0
4.7
0.4
1.5
1.3
0.2
500
10
50
120
70
-
- 40 to + 150
- 40 to + 125
V
Max.
3.65
5.49
2.13
11.0
2.49
DRM
6.2
4.5
1.4
5.3
0.8
Value
+ 100
400
335
664
35
50
4
1
/V
Min.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
RRM
Inches
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
Max.
Unit
A/µs
A/ms
Unit
V/µs
A
°C
mA
mA
mA
W
A
A
A
V
V
V
²
s
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BTB35 Summary of contents
Page 1
... Discrete Triacs(Non-Isolated/Isolated ABSOLUTE MAXIMUM RATINGS Symbol I RMS on-state current (full sine wave) T(RMS) I Non repetitive surge peak on-state TSM current (full cycle, Tj initial = 25°C) ² ² t Value for fusing Critical rate of rise of on-state current dI/ < 100 ns ...
Page 2
... Discrete Triacs(Non-Isolated/Isolated) STATIC CHARACTERISTICS Symbol 380 µ (2) Threshold voltage to R (2) Dynamic resistance DRM DRM RRM I RRM Note 1: minimum IGT is guaranted IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol R Junction to case (AC) ...