HS2-3530RH-8 INTERSIL [Intersil Corporation], HS2-3530RH-8 Datasheet

HS2-3530RH-8

Manufacturer Part Number

HS2-3530RH-8

Description

Low Power, Radiation Hardened Programmable Operational Amplifier

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HS2-3530RH-8.pdf (12 pages)

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Download datasheet (110Kb)

August 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• Radiation Environment

• Wide Range AC Programming

• Wide Range DC Programming

• Supply Current 10 A to 1.2mA

• Dielectrically Isolated Device Islands

• Short Circuit Protection

Description

The HS-3530RH is a Low Power Operational Ampliﬁer which

is an internally compensated monolithic device offering a

wide range of performance speciﬁcations. Parameters such

as power dissipation, slew rate, bandwidth, noise and input

DC parameters are programmed by selecting an external

resistor or current source. Supply voltages as low as 3V

may be used with little degradation of AC performance. The

HS-3530RH has been speciﬁcally designed to meet

exposure to space radiation environments. Operation from -55

to +125

A major advantage of the HS-3530RH is that operating

characteristics remain virtually constant over a wide supply

range ( 3V to 15V), allowing the ampliﬁer to offer maximum

performance in almost any system, including battery

operated equipment. A primary application for this device is

in active ﬁltering and conditioning for a wide variety of

signals that differ in frequency and amplitude. Also, by

modulating the set current, it can be used for designs such

as current controlled oscillators/modulators, sample and

hold circuits and variable active ﬁlters.

Ordering Information

HS2-3530RH-8

HS2-3530RH-Q

HS2-3530RH/SAMPLE

- Neutron Fluence ( ) 5 x 10

- Gamma Rate

- Gamma Dose ( ) 1 x 10

- Slew Rate 0.06 to 3V/ s

- Gain X Bandwidth 100kHz to 5.0MHz

- Power Supply Range 3.0V to 15V

PART NUMBER

C is guaranteed.

( )

1 x 10

TEMPERATURE

-55

RANGE

C to +125

+25

RAD (Si)

RAD (Si)/s

n/cm

Intersil Corporation 1999

8 Lead Metal Can

PACKAGE

10KeV)

762

Pinout

NOTE:

Functional Diagram

1. Case tied to V-.

Programmable Operational Ampliﬁer

HS-3530RH

NON-INVERTING

INVERTING

Low Power, Radiation Hardened

8 LEAD METAL CAN PACKAGE (CAN)

INPUT

OFFSET

INPUT

NULL

+IN

-IN

MIL-STD-1835 MACY1-X8

TOP VIEW

-V

ISET

V-

OFFSET

NULL 2

ISET

OFFSET

NULL 1

Spec Number

OFFSET

NULL

V+

File Number

OUTPUT

OUT

518079

3024.2

Related parts for HS2-3530RH-8

HS2-3530RH-8 Summary of contents

Page 1

... Also, by modulating the set current, it can be used for designs such as current controlled oscillators/modulators, sample and hold circuits and variable active ﬁlters. Ordering Information TEMPERATURE PART NUMBER RANGE o HS2-3530RH-8 - +125 o HS2-3530RH-Q - +125 o HS2-3530RH/SAMPLE +25 C CAUTION: These devices are sensitive to electrostatic discharge ...

Page 2

Absolute Maximum Ratings Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . ...

Page 3

TABLE 1A. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Supply Voltage = 15V, RSOURCE = 100 , RLOAD = 500k , VOUT = 0V, Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS Quiescent Power +ICC IOUT = 0mA Supply Current -ICC ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at 100pF, AVCL = + 75k , Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS VSUPPLY = 15V Slew Rate +SR VOUT = -10V to +10V Note 1 -SR VOUT ...

Page 5

TABLE 4. POST RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Open Loop Voltage Gain AVOL Input Offset Voltage VIO TABLE 5. BURN-IN DELTA PARAMETERS GROUP B, SUBGROUPS 5 (T VIO IBIAS CONFORMANCE MIL-STD-883 GROUP METHOD Initial Test 100% 5004 Interim ...

Page 6

Intersil Space Level Product Flow -Q Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 ...

Page 7

Intersil Space Level Product Flow -8 GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects Periodic- Wire Bond Pull Monitor, Method 2011 Periodic- Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition B ...

Page 8

Test Circuit 10K S1 1 OPEN OPEN 2 10K VAC 100 100 50K Simpliﬁed Transient Response/Slew Rate Circuit VINN Burn-In Circuit + OUTPUT ISET ...

Page 9

Typical Performance Curves 100 PRE-RAD 10 VSUPPLY = 15V SET CURRENT ( A) FIGURE 1. INPUT BIAS CURRENT vs SET CURRENT 200K 100K VSUPPLY = 15V VSUPPLY = 3V 10K 1 10 SET CURRENT ( A) FIGURE ...

Page 10

Typical Performance Curves 25 20 ISET = VSUPPLY = 15V -50 - TEMPERATURE ( FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE Schematic VCC SET 2 D13 ...

Page 11

Metallization Topology DIE DIMENSIONS 11.5mils (1370 x 1700 x 290 m) METALLIZATION: Type: Al Å Å Thickness: 12.5k 2k GLASSIVATION: Type: SiO 2 Å Å Thickness Metallization Mask Layout +IN -V (& PACKAGE) OFFSET ...

Page 12

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, ...

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