PD4M440H_1 NIEC [Nihon Inter Electronics Corporation], PD4M440H_1 Datasheet - Page 3

• Manufacturer Part Number: PD4M440H_1
• Description: MOSFET 30A 450~500V
• Manufacturer: NIEC [Nihon Inter Electronics Corporation]

■定格・特性曲線
Fig. 1 Typical Output Characteristics
Fig. 4 Typical Capacitance
Fig. 4
Fig. 7 Typical Switching Time
Fig. 7
Fig. 10 Maximum Safe Operating Area
1000
500
200
100
200
100
0.5
0.2
50
40
30
20
10
12
10
50
20
10
50
20
10
0
8
6
4
2
0
5
2
1
0
1
1
Vs. Drain-Source Voltage
Vs. Drain Current
Operation in this area
is limited by R
1
2
DRAIN TO SOURCE VOLTAGE V
DRAIN TO SOURCE VOLTAGE V
R
DRAIN TO SOURCE VOLTAGE V
2
2
G
=7Ω V
2
5
DRAIN CURRENT I
T
DS
10
C
C
C
4
DD
C
5
=25℃ T
iss
oss
rss
(on)
=250V T
20
5
10
6
T
j
=150℃MAX Single Pulse
C
=25℃ 250μs Pulse Test
C
50 100
10
=25℃ 80μs Pulse Test
t
t
d
d
20
(on)
(off)
t
D
8
t
r
f
(A)
V
20
GS
200
−441H −440H
=0V f=1kHz
DS
DS
DS
10
(V)
(V)
(V)
50
10V
6V
V
4V
500
GS
100μs
10μs
1ms
10ms
DC
50
=5V
1000
100
12
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Fig. 5 Typical Gate Charge
Fig. 5
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
16
12
60
50
40
30
20
10
8
6
4
2
0
8
4
0
0
0
0
0
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)
Vs. Gate-Source Voltage
Vs. Gate-Source Voltage
Characteristics
SOURCE TO DRAIN VOLTAGE V
GATE TO SOURCE VOLTAGE V
40
TOTAL GATE CHRAGE Q
0.4
4
─ 309 ─
80
T
120
0.8
j
=125℃
8
T
C
=25℃ 250μs Pulse Test
160
V
DD
250μs Pulse Test
g
(nC)
1.2
=100V
12
GS
250V
400V
SD
200
(V)
(V)
I
T
D
j
=30A
I
=25℃
10
10
10
10
10
10
D
15A
10A
=20A
2
5
2
-1
5
2
-2
10
2
5
2
-1
5
2
-2
10
0
0
240
1.6
-5
-5
16
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Fig. 6 Typical Switching Time
Fig. 6
Fig. 9 Typical Reverse Recovery Characteristics
10
10
0.05
500
200
100
0.5
0.2
0.1
-4
-4
16
12
50
20
10
8
4
0
5
2
1
5
-40
2
0
Vs. Junction Temperature
Vs. Series Gate impedance
10
10
I
PULSE DURATION t (s)
PULSE DURATION t (s)
D
100
-3
-3
=15A V
SERIES GATE IMPEDANCE R
JUNCTION TEMPERATURE T
5
0
200
10
10
DD
10
=250V T
toff
-2
-2
40
-dis/dt (A/ μ s)
ton
I
300
20
V
S
=30A I
GS
t
I
10
10
C
=10V 250μs Pulse Test
rr
R
=25℃ 80μs Pulse Test
80
-1
-1
Per Unit Base
R
1 Shot Pulse
Per Unit Base
R
1 Shot Pulse
400
th(j-c)
th(j-c)
50
S
=15A T
=0.56℃/W
=2.0℃/W
G
j
10
10
( )
120
( )
℃
Ω
500
0
0
100
I
D
j
=150℃
=30A
15A
10A
160
200
600
10
10
1
1