T1110P6-SD-F VISHAY [Vishay Siliconix], T1110P6-SD-F Datasheet
T1110P6-SD-F
Related parts for T1110P6-SD-F
T1110P6-SD-F Summary of contents
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... PRODUCT SUMMARY COMPONENT T1110P6 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE Wafer sawn on foil with disco T1110P6-SD-F Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T PARAMETER Reverse voltage Junction temperature Operating temperature range Storage temperature range ...
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... T1110P6 Vishay Semiconductors BASIC CHARACTERISTICS (T amb PARAMETER Breakdown voltage Forward voltage Reverse dark current Diode capacitance Open circuit voltage E Temperature coefficient Short circuit current E Temperature coefficient Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth ...
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... SYMBOL MIN. TYP 2. 0 °C, unless otherwise specified) amb optochipsupport@vishay.com This datasheet is subject to change without notice. T1110P6 Vishay Semiconductors MHz 0 100 V - Reverse Voltage (V) R 1150 350 550 750 950 λ - Wavelength (nm) MAX. UNIT mm ...
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... T1110P6 Vishay Semiconductors HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...