MB84VD21081 FUJITSU [Fujitsu Component Limited.], MB84VD21081 Datasheet - Page 46
MB84VD21081
Manufacturer Part Number
MB84VD21081
Description
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Manufacturer
FUJITSU [Fujitsu Component Limited.]
Datasheet
1.MB84VD21081.pdf
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46
MB84VD2108X
• Write Cycle (Note 3) (WE control) (SRAM)
Addresses
LBs, UBs
Notes : 1.If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
CE2s
CE1s
D
WE
OUT
D
IN
2.If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
3.If OE is HIGH during the write cycle, the outputs will remain at high impedance.
4.Because I/O signals may be in the output state at this time, input signals of reverse
output will remain at high impedance.
output will remain at high impedance.
polarity must not be applied.
t
AS
-85
Note 1
Note 4
/MB84VD2109X
t
WC
t
t
t
t
AW
CW
CW
t
BW
ODW
t
WP
VALID DATA IN
t
DS
-85
t
OEW
t
DH
t
WR
Note 2
Note 4
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