MB84VD21081 FUJITSU [Fujitsu Component Limited.], MB84VD21081 Datasheet - Page 51
MB84VD21081
Manufacturer Part Number
MB84VD21081
Description
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Manufacturer
FUJITSU [Fujitsu Component Limited.]
Datasheet
1.MB84VD21081.pdf
(55 pages)
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Notes : 1.In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs 0.2 V or Vss
Note : Test conditions T
Please handle this package carefully since the sides of packages are right angle.
Parameter
• CE2s Controlled Data Retention Mode (Note 3)
PIN CAPACITANCE
CAUTION
Symbol
HANDLING OF PACKAGE
1. The high voltage (V
2. For the sector protection, since the high voltage (V
C
C
C
C
OUT
use autoselect and sector protect function by applying the high voltage (V
sector using “Extended sector protect” command.
2.When CE1s is operating at the V
3.In CE2s controlled data retention mode, input and input/output pins can be used between 0.3 V and
IN2
IN3
2.7 V
IN
V
GND
Vccs
V
CC
to 0.2 V during data retention mode. Other input and input/output pins can be used between 0.3 V and
Vccs
transition of V
V
V
DH
IH
IL
s
0.3 V.
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
0.3 V.
CE2s
Parameter Description
A
CC
s from 3.6 to 2.2 V.
ID
25 C, f
) can not apply to address pins and control pins except RESET. Therefore, it can not
t
CDR
1.0 MHz
MB84VD2108X
IH
min. level (2.2 V) , the standby current is given by I
V
V
V
V
DATA RETENTION MODE
IN
OUT
IN
IN
0
0
0
Test Setup
0
ID
) can be applied to the RESET, it can be protected the
0.2 V
-85
/MB84VD2109X
Typ.
11
12
14
17
ID
) to specific pins.
t
R
Max.
14
16
16
20
SB1
s during the
Unit
pF
pF
pF
pF
-85
51
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