MMBT3906-HF_12 COMCHIP [Comchip Technology], MMBT3906-HF_12 Datasheet

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MMBT3906-HF_12

Manufacturer Part Number
MMBT3906-HF_12
Description
General Purpose Transistor
Manufacturer
COMCHIP [Comchip Technology]
Datasheet
Electrical Characteristics
MMBT3906-HF
RoHS Device
Maximum Ratings
QW-JTR01
Halogen Free
General Purpose Transistor
Features
Emitter-Base breakdown voltage
Emitter cut-off current
DC current gain
Delay time
Rise time
Fall time
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipatioin
Storage temperature and junction temperature
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Storage time
-Epitaxial planar die construction
-As complementary type, the NPN
transistor MMBT3906-HF is recommended
Base
1
Parameter
Parameter
Collector
Emitter
3
2
(at TA=25°C unless otherwise noted)
(at TA=25°C unless otherwise noted)
I
I
I
I
I
I
I
V
V
V
V
V
V
f=100MH
V
V
C
C
E
C
C
C
B1
(PNP)
CB
CE
EB
CE
CE
CE
CC
CC
=-50mA , I
=-50mA , I
=-10mA , I
=-100μA , I
=-100μA , I
=-1mA , I
=I
=-5V , I
=-40V , I
=-40V , I
=-1V , I
=-1V , I
=-20V , I
=-3.0V , V
=-3.0V
B2
=-1.0mA
Conditions
Z
Symbol
dc
T
STG
C
C
C
B
B1
V
V
V
B
B
=0
=-10mA
=-50mA
=0
E
B
C
, I
P
CBO
CEO
C
=-5mA
=-5mA
EBO
I
E
BE
=-1.0mA
=0
=0
=-10mA
C
C
C
=0
=0
, T
=-10mA
=-0.5V
J
0.056 (1.40)
0.047 (1.20)
0.041 (1.05)
0.035 (0.90)
Symbol
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
h
h
CE
BE
Min
I
I
Dimensions in inches and (millimeter)
I
CBO
CEO
-55
EBO
FE(1)
FE(2)
f
td
ts
tr
tf
(sat)
(sat)
T
0.020 (0.50)
0.012 (0.30)
1
SOT-23
0.079 (2.00)
0.071 (1.80)
0.119 (3.00)
0.110 (2.80)
Min
Typ
100
250
-40
-40
60
-5
3
0.004 (0.10) max
2
0.020 (0.50)
0.012 (0.30)
0.100 (2.55)
0.089 (2.25)
Max
Max
0.006 (0.15)
0.003 (0.08)
-0.95
+150
-0.2
-0.3
-0.1
-0.1
-0.1
300
225
-40
-40
0.3
35
35
75
-5
Unit
Unit
Mhz
µA
µA
µA
nS
nS
nS
nS
°C
W
V
V
V
A
V
V
V
V
V
REV:B
Page 1

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MMBT3906-HF_12 Summary of contents

Page 1

... General Purpose Transistor MMBT3906-HF RoHS Device Halogen Free Features -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3906-HF is recommended Collector 3 1 Base 2 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipatioin ...

Page 2

... General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906-HF) Fig.1- Static Characteristic -90 -80 -60 -40 - Collector-Emitter Voltage, Fig CEsat — 500 300 100 -30 -10 1 -10 Collector Current , Ic (mA) Fig — -100 -30 Ta =100°C - -0.3 -0.1 -0.0 -0.2 -0.4 -0.6 Base - Emmiter Voltage , V ...

Page 3

... General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906-HF) Fig — 600 400 200 -1 -3 -10 Collector current, Ic (mA) QW-BTR02 C 300 VCE=-20V Ta=25°C 250 200 150 100 50 -30 -50 Fig. — 100 Ambient Temperature , Ta (°C) 125 150 REV:B ...

Page 4

General Purpose Transistor Reel Taping Specification Trailer End ....... 10 pitches (min) A SYMBOL SOT-23 (mm) 3.15 ± 0.10 (inch) 0.124 ± 0.004 E SYMBOL SOT-23 (mm) 1.75 ± 0.10 (inch) 0.069 ± 0.004 ...

Page 5

... General Purpose Transistor Marking Code Marking Code Part Number MMBT3906- Marking Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 Standard Packaging Qty per Reel Reel Size Case Type (Pcs) SOT-23 3000 QW-JTR01 Code: Per A.D. Year(Even)-Month ...

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