SF1200_05 VISHAY [Vishay Siliconix], SF1200_05 Datasheet - Page 2

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SF1200_05

Manufacturer Part Number
SF1200_05
Description
Ultra Fast Avalanche Sinterglass Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SF1200 / SF1600
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 2. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
amb
16463
15789
0.01
0.001
= 25 °C, unless otherwise specified
100
0.1
10
1.0
0.8
0.6
0.4
0.2
0.0
1
0
0
Parameter
T
j
20 40 60 80 100 120 140 160 180
= 175 °C
1
R
PCB: d = 25 mm
thJA
T
amb
2
V
= 100 K/W
– Ambient Temperature(°C )
F
– Forward Voltage ( V )
3
T
j
= 25 °C
4
Figure 1.
5
R
I
V
V
I
I
half sinewave
6
V
F
R
F
thJA =
R
R
R
l = 10 mm
= 1 A
= 0.5 A, I
= 100 µA
= V
= V
= V
7
45 K/W
RRM
RRM
RRM
8
Test condition
, T
R
9
= 1 A, i
j
= 125 °C
R
= 0.25 A
SF1200
SF1600
Part
16464
16465
Figure 4. Max. Reverse Power Dissipation vs. Junction
1000
100
Figure 3. Reverse Current vs. Junction Temperature
700
600
500
400
300
200
100
10
1
0
25
25
Symbol
V
V
(BR)R
(BR)R
V
I
I
t
R
R
rr
V
F
R
50
50
= V
T
T
j
j
– Junction Temperature (°C )
– Junction Temperature (°C )
RRM
75
75
1250
1650
Min
@80 % V
Temperature
P
100
100
R
–Limit
@100 % V
P
125
125
R
R
–Limit
Typ.
V
R
= V
150
R
150
Document Number 86059
RRM
175
175
Rev. 1.6, 14-Apr-05
Max
3.4
50
75
5
Unit
µA
µA
ns
V
V
V

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