2mbi300u4e-120 Fuji Electric holdings CO.,Ltd, 2mbi300u4e-120 Datasheet
2mbi300u4e-120
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2mbi300u4e-120 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Mar. 09 ’05 Y.Seki T.Miyasaka Mar. 09 ’05 K.Yamada IGBT MODULE 2MBI300U4E-120 MS5F 6058 MS5F6058 H04-004-07b ...
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Classi- Date Ind. fication Enactment Mar.-09 -’05 Revised characteristics a Revision Oct.-25-’ Applied Content Drawn date Issued date S.Miyashita VCE(sat) (P4/13) MS5F6058 Checked Checked Approved T.Miyasaka ...
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... Outline Drawing ( Unit : Equivalent circuit 2MBI300U4E-120 MS5F6058 H04-004-03a ...
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Absolute Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Mounting (*2) Terminals (*3) Torque (*1) All terminals should ...
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... Indication on module Logo of production 2MBI300U4E-120 Lot.No. 7. Applicable category This specification is applied to IGBT-Module named 2MBI300U4E-120. 8. Storage and transportation notes • The module should be stored at a standard temperature • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle ...
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Collector current vs. Collector-Emitter voltage (typ.) o Tj= chip 800 700 VGE=20V 15V 12V 600 500 400 300 200 100 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) ...
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.0Ω, Tj=25 10000 1000 toff ton 100 10 0 100 200 300 400 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj=25 10000 1000 ...
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Forward current vs. Forward on voltage (typ.) chip 800 700 o 600 Tj=25 C Tj=125 500 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
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Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...