2mbi400u4h-170 Fuji Electric holdings CO.,Ltd, 2mbi400u4h-170 Datasheet

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2mbi400u4h-170

Manufacturer Part Number
2mbi400u4h-170
Description
Igbt Modules
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Apr. 15 ’05
Apr. 15 ’05
K.Yamada
S.Miyashita
T.Miyasaka
Device Name
Type Name
Spec. No.
SPECIFICATION
Y.Seki
:
:
:
2MBI400U4H-170
IGBT MODULE
MS5F 6098
MS5F6098
H04-004-07b
1
13
a

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2mbi400u4h-170 Summary of contents

Page 1

... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Apr. 15 ’05 Y.Seki T.Miyasaka Apr. 15 ’05 K.Yamada IGBT MODULE 2MBI400U4H-170 MS5F 6098 MS5F6098 H04-004-07b ...

Page 2

Classi- Date Ind. fication Enactment Apr.-15 -’05 Revised characteristics a Revision Oct.-25-’ Applied Content Drawn date Issued date S.Miyashita VCE(sat) (P4/13) MS5F6098 Checked Checked Approved T.Miyasaka ...

Page 3

... Outline Drawing ( Unit : Equivalent circuit 2MBI400U4H-170 MS5F6098 H04-004-03a ...

Page 4

Maximum Ratings ( at Tc= 25°C unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Mounting (*2) Screw Torque Terminals (*3) (*1) ...

Page 5

... Logo of production Lot.No. 7.Applicable category This specification is applied to IGBT Module named 2MBI400U4H-170 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature 35°C and humidity 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ...

Page 6

Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...

Page 7

Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...

Page 8

Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle ...

Page 9

Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 VGE=20V 15V 12V 800 600 400 200 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25°C 800 ...

Page 10

Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 1000 100 10 0 200 400 600 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=400A, VGE=±15V, Tj= 25°C 10000 1000 ton toff tr ...

Page 11

Forward current vs. Forward on voltage (typ.) chip 1000 800 Tj=25°C Tj=125°C 600 400 200 Forward on voltage : VF [V] Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width : Pw [sec] ...

Page 12

This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格(電圧,電流,温度等)の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...

Page 13

Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...

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