qm75tf-hb Mitsumi Electronics, Corp., qm75tf-hb Datasheet - Page 3

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qm75tf-hb

Manufacturer Part Number
qm75tf-hb
Description
Mitsubishi Transistor Modules
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QM75TF-HB
Manufacturer:
MITSUBISHI
Quantity:
57
Part Number:
QM75TF-HB
Manufacturer:
FUJI
Quantity:
726
Part Number:
QM75TF-HB
Quantity:
60
PERFORMANCE CURVES
10
10
200
160
120
10
80
40
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
0
10
COLLECTOR-EMITTER VOLTAGE V
2.0
0
COLLECTOR-EMITTER SATURATION
–3
T
V
T
BASE-EMITTER VOLTAGE V
j
j
CE
=25°C
=25°C
2
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
=2.5V
COMMON EMITTER INPUT
3
2.4
1
4
BASE CURRENT I
5
VOLTAGE (TYPICAL)
7
10
2.8
–2
2
2
3
4
5
3.2
3
I
7
C
10
=30A
I
C
=50A
B
–1
(A)
T
T
2
3.6
j
j
=25°C
=125°C
4
I
BE
3
C
=75A
4
(V)
5
CE
7
4.0
(V)
5
10
0
10
10
10
10
10
10
10
10
–1
–1
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
1
4
3
0
10
1
0
10
2 3 4 5 7
I
I
0
SWITCHING TIME VS. COLLECTOR
V
0
B1
B2
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
CC
=150mA
=–1.5A
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
=300V
t
t
2 3 4 5 7
s
2 3 4 5 7
f
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
t
j
j
=25°C
=125°C
on
V
CURRENT (TYPICAL)
BE(sat)
HIGH POWER SWITCHING USE
10
1
V
V
CE(sat)
CE
10
10
2 3 4 5 7
=2.5V
1
1
I
B
=100mA
2 3 4 5 7
2 3 4 5 7
QM75TF-HB
T
T
V
T
T
j
j
=25°C
=125°C
CE
j
j
C
C
=125°C
C
INSULATED TYPE
=25°C
10
=5.0V
(A)
(A)
(A)
2
10
10
2
2
2
Feb.1999

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