qm75tf-hb Mitsumi Electronics, Corp., qm75tf-hb Datasheet - Page 4

• Manufacturer Part Number: qm75tf-hb
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
0
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
10
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
0
0
0
–3
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
C
2
2
2 3 45 7
=25°C
SWITCHING TIME VS. BASE
3
2 3 4 5 7
3
4
4
CURRENT (TYPICAL)
5
5
7
7
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
t
4
4
t
f
1
w
t
5
5
s
=50µs
7
7
V
I
I
10
B1
C
2 3 4 5 7
10
CC
=75A
=150mA
–1
=300V
2
T
T
2
2
j
j
=25°C
=125°C
3
3
B2
100µs
4
4
5
5
(A)
CE
7
7
10
10
(V)
10
2
0
3
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0 100
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
T
T
0.4
COLLECTOR
DISSIPATION
j
j
=25°C
=125°C
200
40
HIGH POWER SWITCHING USE
I
300 400 500
60
B2
0.8
–V
=–3.5A
CEO
80 100 120 140
(V)
1.2
SECOND
BREAKDOWN
AREA
QM75TF-HB
600 700
I
B2
C
1.6
=–2.0A
INSULATED TYPE
( C)
CE
160
800
2.0
(V)
Feb.1999