mbn1200h45e2 CT-Concept Technologie AG, mbn1200h45e2 Datasheet - Page 2

• Manufacturer Part Number: mbn1200h45e2
• Description: Silicon N-channel Igbt
• Manufacturer: CT-Concept Technologie AG

IGBT MODULE
THERMAL CHARACTERISTICS
DEFINITION OF TEST CIRCUIT
Thermal Impedance
Contact Thermal Impedance
MBN1200H45E2
0
0
Item
Eon(10%)=
Eon(Full) =
Vce
10%
IGBT
FWD
90%
10%
t1
t3
ton
∫
tr
∫
t4
t4
t3
t2
t1
10%
I c ･ V c e d t
t2
I c ･ V c e d t
Vge
Ic
Fig.3 Definition of switching loss
0
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Vcc
Vce
t
t
Fig.1 Switching test circuit
Fig.2 Definition of Ls
0
0
Unit
K/W
K/W
Vge
Eoff(10%)=
Eoff(Full) =
Ic
tL
90%
10%
G/D
VL
t5
Min.
-
-
-
t7
∫
Ic
∫
toff
Ls
tf
90%
Rg
t8
t7
0.005
t6
t5
t8
Typ.
I c ･ V c e d t
I c ･ V c e d t
-
-
10%
t
t6
0.0085
Max.
0.017
Vce
-
Ls=
t
t
Junction to case
Case to fin (λgrease=1W/(m
( )
heat-sink flatness ≤50um)
dIc
d
0
V
Target
ｔ
-Ic
L
L
Err(10%)=
Err(Full) =
LOAD
t=t
Test Conditions
Spec.No.IGBT-SP-08007 R3 P
L
IF
Specification
Irm
0.1Vce
∫
∫
t9
t10
t9
t12
t11
t11
I F ･ V c e d t
I F ･ V c e d t
trr
t12
0.5Irm
Vce
･
0.1IF
K ),
t10
t
2