SST13LP01-QDF-K SST [Silicon Storage Technology, Inc], SST13LP01-QDF-K Datasheet

SST13LP01-QDF-K

Manufacturer Part Number

SST13LP01-QDF-K

Description

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST13LP01-QDF-K.pdf (27 pages)

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FEATURES:

• High Gain:

• High linear output power:

• High power-added efficiency/Low operating

• Built-in Ultra-low I

PRODUCT DESCRIPTION

The SST13LP01 is a high-gain, high-performance, dual-

band power amplifier IC based on the highly-reliable

InGaP/GaAs HBT technology.

The SST13LP01 device can be easily configured for high-

power applications with superb power-added efficiency

while operating over the 802.11a/b/g frequency band for

U.S., European, and Japanese markets (2.4-2.5 GHz and

4.9-5.8 GHz.

The SST13LP01 has excellent linearity, typically ~4%

added EVM at 21 dBm output power which is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 23 dBm and 802.11b spectrum mask at 23

dBm. For 802.11a operation, the SST13LP01 has demon-

strated typically ~4% added EVM at 20 dBm output power

while meeting 802.11a spectrum mask at 22 dBm. The

S71287-00-000

– Typically 28 dB gain across 2.4-2.5 GHz over

– Typically 30-33 dB gain across 4.9-5.8 GHz over

– >29 dBm P1dB across 2.4-2.5 GHz

– Meets 802.11g OFDM ACPR requirement up to

– Added EVM~4% up to 21 dBm for

– Meets 802.11b ACPR requirement up to 23 dBm

– ~28 dBm P1dB (Pulsed single-tone signal)

– Meets 802.11a OFDM ACPR requirement up to

– Added EVM~4% up to 20 dBm for

current for both 802.11a/b/g applications

– ~24%/250 mA @ P

– ~23%/260 mA @ P

– ~9.5%/320 mA @ P

– I

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

temperature 0°C to +85°C

(Exceeding maximum rating of average output

power, never measure with CW source! Pulsed

single-tone source with <50% duty cycle is rec-

ommended.)

23 dBm

54 Mbps 802.11g signal

across 4.9~5.8 GHz

22 dBm over whole band

54 Mbps 802.11a signal

REF

<3 mA

11/05

REF

SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier

OUT

power-up/down control

= 23 dBm for 802.11g

= 23 dBm for 802.11b

= 20 dBm for 802.11a

SST13LP01

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

• Low idle current

• High-speed power-up/down

• High temperature stability

• Low shut-down current (< 0.1 µA)

• On-chip power detection

• 20 dB dynamic range on-chip power detection

• Simple input/output matching

• Packages available

APPLICATIONS:

• WLAN (IEEE 802.11a/g/b)

• Japanese WLAN

• HyperLAN2

• Multimedia

• Home RF

• Cordless phones

SST13LP01 also has wide-range (>20 dB), temperature-

stable (~1 dB over 85°C), single-ended/differential power

detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/down control.

Ultra-low reference current (total I

SST13LP01 controllable by an on/off switching signal

directly from the baseband chip. These features, coupled

with low operating current, make the SST13LP01 ideal

for the final stage power amplification in both battery-

powered 802.11a/b/g WLAN transmitter and access

point applications.

The SST13LP01 is offered in a 24-contact WQFN package.

See Figure 1 for pin assignments and Table 1 for pin

descriptions.

– ~70 mA I

– ~170 mA I

– Turn on/off time (10%~90%) <100 ns

– Typical power-up/down delay with driver delay

– ~1 dB gain/power variation between 0°C to +85°C

– ~3.5/1.5 dB gain/max linear power variation

– ~1 dB detector variation over 0°C to +85°C

– 24-contact WQFN (4mm x 4mm)

– Non-Pb (lead-free) packages available

included <200 ns

across 2.4~2.5 GHz

between 0°C to +85°C across 4.9~5.8 GHz

(802.11b/g)

(802.11a)

These specifications are subject to change without notice.

Preliminary Specifications

REF

<3 mA) makes the

Related parts for SST13LP01-QDF-K

SST13LP01-QDF-K Summary of contents

Page 1

... The SST13LP01 is a high-gain, high-performance, dual- band power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST13LP01 device can be easily configured for high- power applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4 ...

Page 2

... B D UNCTIONAL LOCK IAGRAM RFIN_LB RFIN_HB VREF123_HB ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Bias Circuit Bias Circuit SST13LP01 18 RFOUT_LB 17 GND 16 GND 15 RFOUT_HB 14 RFOUT_HB 13 Det_HB 1287 B1.2 S71287-00-000 11/05 ...

Page 3

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 PIN ASSIGNMENTS RFIN_LB RFIN_HB VREF123_HB FIGURE SSIGNMENTS FOR ©2005 SST Communications Corp Top View (contacts facing down and DC GND 16- WQFN CONTACT 3 Preliminary Specifications ...

Page 4

... RF output for Low Band, DC decoupled O Detector Voltage Output for Low Band Unconnected pin PWR 1st stage Power supply for Low Band PWR Power Supply, Bias circuit for Low Band PWR Current Control for Low Band Unconnected pin 4 SST13LP01 T1.1 1287 S71287-00-000 11/05 ...

Page 5

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec- ifications. Refer to Figures 2 through 28 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Rat- ings” ...

Page 6

... Harmonics at 22 dBm, without trapping capacitors ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Min. Typ Max. 3.0 3.3 3.6 250 260 70 0.1 2.75 2.85 2.95 C ONFIGURATION Min. 2400 SST13LP01 Unit Test Conditions µA V T2.1 1287 Typ Max. Unit 2485 MHz ±0 dBm ...

Page 7

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 For 802.11a Operation TABLE LECTRICAL HARACTERISTICS Symbol V Supply Voltage at pins Supply Current CC for 802.11a, 21 dBm Idle current CQ I Shut down current OFF V Reference Voltage at pin 6, with 0Ω resistor REG ...

Page 8

... Frequency (GHz) FIGURE S-P OW AND ARAMETERS ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier 0 -10 -20 -30 -40 -50 -60 -70 -80 7.0 8.0 9.0 10.0 11.0 0.0 1.0 2 -10 -15 -20 -25 -30 7.0 8.0 9.0 10.0 11.0 0.0 1.0 2.0 8 SST13LP01 S12 versus Frequency 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) S22 versus Frequency 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) S71287-00-000 11/05 ...

Page 9

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11B 3.3V, V EST ONDITIONS Freq = 2.412 Freq = 2.442 Freq = 2.484 FIGURE EVM OW AND VERSUS 275 250 Freq = 2 .412 G Hz 225 Freq = 2 ...

Page 10

... Output Power (dBm UTPUT OWER 2.40 2.45 Frequency (GHz PECTRUM ASK WITH 10 SST13LP01 1287 F05.0 Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz dBm OUT DC current = 250 mA 2.50 2. 250 A URRENT AT ...

Page 11

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 TYPICAL PERFORMANCE CHARACTERISTICS 3.3V, V EST ONDITIONS -10 -20 -30 -40 -50 -60 -70 -80 2.35 FIGURE 802.11 OW AND ©2005 SST Communications Corp 2.85V 25° REG LB A 2.40 2.45 Frequency (GHz PECTRUM ASK WITH 11 Preliminary Specifications 802 ...

Page 12

... Detector Voltage versus Output Power Output Power (dBm ETECTOR HARACTERISTICS OVER P LL HASES 12 SST13LP01 802.11 OFDM S PBS G Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min EMPERATURE WITH Freq = 2 ...

Page 13

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0. FIGURE 10 CH14 D OW AND 2:1 O VSWR A UTPUT Freq = 2.412 GHz (25 C) 1.50 Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) 1.40 Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) 1.30 Freq =2.412 GHz (85 C) Freq = 2 ...

Page 14

... Detector Voltage versus Output Power Output Power (dBm ETECTOR HARACTERISTICS OVER P LL HASES 14 SST13LP01 802.11 CCK S PBS G IGNAL Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min ...

Page 15

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0. FIGURE 14 CH14 D OW AND 2:1 O VSWR A UTPUT Freq = 2.412 GHz (25 C) 1.50 Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) 1.40 Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) 1.30 Freq =2.412 GHz (85 C) Freq = 2 ...

Page 16

... Frequency (GHz) FIGURE 16 S-P IGH AND ARAMETERS ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier 0 -10 -20 -30 -40 -50 -60 -70 -80 6.0 7.0 8.0 9.0 10.0 0 -10 -15 -20 -25 -30 6.0 7.0 8.0 9.0 10.0 0.0 1.0 16 SST13LP01 S12 versus Frequency 2.0 3.0 4.0 5.0 6 8.0 9.0 Frequency (GHz) S22 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) S71287-00-000 10.0 10.0 11/05 ...

Page 17

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11A 3.3V, V EST ONDITIONS Fre Fre Fre Fre q = 5.805 GHz FIGURE 17 EVM IGH AND VERSUS 425 Freq = 4.92 GHz 400 Freq = 5 ...

Page 18

... PAE versus Output Power Output Power (dBm UTPUT OWER 4.89 4.91 4.93 Frequency (GHz 4. PECTRUM ASK SST13LP01 dBm OUT DC current = 385 mA 4.95 4.97 4. UTPUT OWER D M WITH S71287-00-000 11/05 ...

Page 19

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 10 0 -10 -20 -30 -40 -50 -60 -70 5.11 5.13 FIGURE 21 802.11 IGH AND DC C 375 URRENT -10 -20 -30 -40 -50 -60 -70 5.25 5.27 FIGURE 22 802.11 IGH AND DC C 365 URRENT AT ©2005 SST Communications Corp. 5.15 5.17 5.19 Frequency (GHz 5. PECTRUM ASK AT ...

Page 20

... FIGURE 23 802.11 IGH AND DC C 395 URRENT AT ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier 5.78 5.80 5.82 Frequency (GHz 5.805 GH A PECTRUM ASK SST13LP01 dBm OUT DC current = 395 mA 5.84 5 UTPUT OWER D M WITH S71287-00-000 11/05 ...

Page 21

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 HIGH BAND POWER DETECTOR CHARACTERISTICS 3.3V, V EST ONDITIONS CC 1.80 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0. FIGURE 24 IGH AND ETECTOR 1.80 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0. FIGURE 25 IGH AND ETECTOR ©2005 SST Communications Corp 2.9V 25° REG B A Detector Voltage versus Output Power ...

Page 22

... Detector Voltage versus Output Power Output Power (dBm HARACTERISTICS OVER EMPERATURE AT 22 SST13LP01 Freq = 5.32 GHz (0 C) Freq = 5.32 GHz (25 C) Freq = 5.32 GHz ( 5. Freq = 5.805 GHz (0 C) Freq = 5.805 GHz (25 C) Freq = 5.805 GHz (85 C) ...

Page 23

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 1.80 Freq = 4.92 GHz (25 C) Freq = 5.18 GHz (25 C) 1.70 Freq = 5.32 GHz (25 C) 1.60 Freq = 5.805 GHz (25 C) 1.50 Freq = 4.92 GHz (0 C) Freq = 5.18 GHz (0 C) 1.40 Freq = 5.32 GHz (0 C) 1.30 Freq = 5.805 GHz (0 C) Freq = 4.92 GHz (85 C) 1.20 Freq = 5.18 GHz (85C) 1.10 Freq = 5.32 GHz (85 C) Freq = 5 ...

Page 24

... HB Bias Circuit C14 100pF C12 0.1uF C16 0.1uF C13 0.1 uF C15 0.1uF 24 SST13LP01 Det_LB C7 0.1uF L1 12nH 50Ω mil RFout_LB C8 47pF C9 2.4pF mil 50Ω RFout_HB C10 0.3pF Det_HB C11 10 pF 1287 Schematic1.0 S71287-00-000 11/05 ...

Page 25

... X Valid combinations for SST13LP01 SST13LP01-QDF SST13LP01 Evaluation Kits SST13LP01-QDF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2005 SST Communications Corp. Preliminary Specifications ...

Page 26

... SST conversion of data sheet GP1301 ©2005 SST Communications Corp. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SIDE VIEW BOTTOM VIEW 0.2 4.00 ± 0.08 0.075 0.05 Max 0.80 0. (WQFN) UAD LAT O LEAD Description 26 SST13LP01 See notes 2 and 3 Pin #1 2.3 0.5 BSC 2.3 0.30 0.18 0.45 0.35 1mm 24-wqfn-4x4-QD-1.2 leads the unit. SS Date Nov 2005 S71287-00-000 11/05 ...

Page 27

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst ...

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