SST13LP01-QDF-K SST [Silicon Storage Technology, Inc], SST13LP01-QDF-K Datasheet - Page 6

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SST13LP01-QDF-K

Manufacturer Part Number
SST13LP01-QDF-K
Description
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
Preliminary Specifications
For 802.11b/g Operation
TABLE 2: DC E
TABLE 3: AC E
©2005 SST Communications Corp.
Symbol
V
I
I
I
V
Symbol
F
G
G
G
ACPR
Added EVM
2f, 3f, 4f, 5f
CC
CQ
OFF
L-U
CC
REG
VAR1
VAR2
Supply Voltage at pin 21
Supply Current
Idle current for 802.11g to meet EVM<4% @ 21 dBm
Shut down current
Reference Voltage at pin 22, with 105Ω resistor
for 802.11g, 23 dBm
for 802.11b, 23 dBm
Parameter
Frequency range
Small signal gain
Gain variation over band (2400~2485 MHz)
Gain ripple over channel (20 MHz)
Meet 11b spectrum mask
Meet 11g OFDM 54 MBPS spectrum mask
P
Harmonics at 22 dBm, without trapping capacitors
OUT
LECTRICAL
LECTRICAL
= 22 dBm output with 54 MBPS 11g OFDM signal
C
C
HARACTERISTICS
HARACTERISTICS FOR
Parameter
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
C
ONFIGURATION
6
Min.
2.75
3.0
Typ
2.85
250
260
3.3
70
2400
Min.
27
22
22
Max.
2.95
3.6
0.1
Unit
mA
mA
mA
Typ
µA
0.2
28
23
23
V
V
4
Test Conditions
Max.
2485
±0.5
-40
29
S71287-00-000
SST13LP01
MHz
dBm
dBm
Unit
dBc
dB
dB
dB
%
T2.1 1287
T3.1 1287
11/05

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