SST29EE010-120-3C-E SST [Silicon Storage Technology, Inc], SST29EE010-120-3C-E Datasheet - Page 10

• Manufacturer Part Number: SST29EE010-120-3C-E
• Description: 1 Megabit (128K x 8) Page Mode EEPROM
• Manufacturer: SST [Silicon Storage Technology, Inc]

© 1998 Silicon Storage Technology, Inc.
AC CHARACTERISTICS
T
T
T
Symbol
ABLE
ABLE
ABLE
T
T
T
T
T
T
T
T
T
Symbol
T
T
T
T
T
T
T
T
T
Symbol
T
T
T
T
T
T
T
T
T
RC
CE
AA
OE
CLZ
OLZ
CHZ
OHZ
OH
RC
CE
AA
OE
CLZ
OLZ
CHZ
OHZ
OH
RC
CE
AA
OE
CLZ
OLZ
CHZ
OHZ
OH
(1)
(1)
(1)
10: 29EE010 R
11: 29LE010 R
12: 29VE010 R
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address
Change
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
EAD
EAD
EAD
C
C
C
YCLE
YCLE
YCLE
T
T
T
IMING
IMING
IMING
P
P
P
ARAMETERS
ARAMETERS
ARAMETERS
10
SST29EE010, SST29LE010, SST29VE010
29LE010-150
29VE010-200
Min
Min
Min
150
200
29EE010-90
90
0
0
0
0
0
0
0
0
0
1 Megabit Page Mode EEPROM
Max
Max
Max
150
150
200
200
100
90
90
40
30
30
60
30
30
50
50
29EE010-120
29LE010-200
29VE010-250
Min
Min
Min
120
200
250
0
0
0
0
0
0
0
0
0
Max
Max
Max
120
120
200
200
100
250
250
120
50
30
30
50
50
50
50
304 PGM T11.0
304 PGM T12.0
304 PGM T10.1
Units
Units
Units
304-04 12/97
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns