SST34HF1601-70-4C-L1P SST [Silicon Storage Technology, Inc], SST34HF1601-70-4C-L1P Datasheet

SST34HF1601-70-4C-L1P

Manufacturer Part Number

SST34HF1601-70-4C-L1P

Description

16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST34HF1601-70-4C-L1P.pdf (32 pages)

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16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory

FEATURES:

• Flash Organization: 1M x16

• Dual-Bank Architecture for Concurrent

• SRAM Organization:

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Hardware Sector Protection (WP#)

• Hardware Reset Pin (RST#)

• Sector-Erase Capability

PRODUCT DESCRIPTION

The SST34HF1621/1641 ComboMemory devices inte-

grate a 1M x16 CMOS flash memory bank with a 256K x8/

128K x16 or 512K x8/ 256K x16 CMOS SRAM memory

bank in a Multi-Chip Package (MCP). These devices are

fabricated using SST’s proprietary, high-performance

CMOS SuperFlash technology incorporating the split-gate

cell design and thick oxide tunneling injector to attain better

reliability and manufacturability compared with alternate

approaches. The SST34HF1621/1641 devices are ideal for

applications such as cellular phones, GPSs, PDAs and

other portable electronic devices in a low power and small

form factor system.

The SST34HF1621/1641 features dual flash memory bank

architecture allowing for concurrent operations between the

two flash memory banks and the SRAM. The devices can

read data from either bank while an Erase or Program

operation is in progress in the opposite bank. The two flash

memory banks are partitioned into 4 Mbit and 12 Mbit with

top or bottom sector protection options for storing boot

code, program code, configuration/parameter data and

user data.

S71172-05-000 10/01

Read/Write Operation

– 16 Mbit: 12 Mbit + 4 Mbit

– 2 Mbit: 256K x8 or 128K x16

– 4 Mbit: 512K x8 or 256K x16

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 25 mA (typical)

– Standby Current: 20 µA (typical)

– Protects 4 outer most sectors (4 KWord) in the

– Resets the internal state machine to reading

– Uniform 1 KWord sectors

larger bank by holding WP# low and unprotects

by holding WP# high

data array

SST34HF1621/ 164116 Mb CSF (x16) + 2/4 Mb SRAM (x16) ComboMemories

523

SST34HF1621 / SST34HF1641

Concurrent SuperFlash and ComboMemory are trademarks of Silicon Storage Technology, Inc.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Block-Erase Capability

• Read Access Time

• Latched Address and Data

• Fast Erase and Word-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Conforms to Common Flash Memory Interface

• Packages Available

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles. The SST34HF1621/1641 devices

offer a guaranteed endurance of 10,000 cycles. Data

retention is rated at greater than 100 years. With high per-

formance Word-Program, the flash memory banks provide

a typical Word-Program time of 14 µsec. The entire flash

memory bank can be erased and programmed word-by-

word in typically 8 seconds for the SST34HF1621/1641,

when using interface features such as Toggle Bit or Data#

Polling to indicate the completion of Program operation. To

protect against inadvertent flash write, the SST34HF1621/

1641 devices contain on-chip hardware and software data

protection schemes.

– Uniform 32 KWord blocks

– Flash: 70 and 90 ns

– SRAM: 70 and 90 ns

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 8 seconds (typical)

– Internal

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

(CFI)

– 56-ball LFBGA (8mm x 10mm)

Generation

These specifications are subject to change without notice.

Data Sheet

Related parts for SST34HF1601-70-4C-L1P

SST34HF1601-70-4C-L1P Summary of contents

Page 1

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST34HF1621/ 164116 Mb CSF (x16) + 2/4 Mb SRAM (x16) ComboMemories FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 ...

Page 2

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory The flash and SRAM operate as two independent memory banks with respective bank enable signals. The memory bank selection is done by two bank enable signals. The SRAM bank ...

Page 3

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet Flash Sector/Block-Erase Operation The Sector/Block-Erase operation allows the system to erase the device on a sector-by-sector or block-by-block basis. The SST34HF1621/1641 offer both Sector-Erase ...

Page 4

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory Toggle Bit ( valid after the rising edge of sixth WE# 6 (or BEF#) pulse. See Figure 10 for Toggle Bit timing dia- gram and Figure 22 ...

Page 5

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet Product Identification Mode Exit/ CFI Mode Exit In order to return to the standard Read mode, the Software Product Identification mode must be exited. ...

Page 6

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory Bottom Sector Protection; 32 KWord Blocks; 1 KWord Sectors 4 KWord Sector Protection (Four 1 KWord Sectors) FIGURE 1: SST34HF1621/1641 ©2001 Silicon Storage Technology, Inc. SST34HF1621 / ...

Page 7

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet FIGURE SSIGNMENTS FOR TABLE ESCRIPTION Symbol Pin Name Address Inputs MS 0 ...

Page 8

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory TABLE PERATIONAL ODES Mode BEF# BES1# Full Standby Output Disable ...

Page 9

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet TABLE OFTWARE OMMAND Command 1st Bus Sequence Write Cycle 1 2 Addr Data Word-Program 5555H AAH Sector-Erase 5555H AAH Block-Erase 5555H ...

Page 10

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory TABLE YSTEM NTERFACE NFORMATION Address Data Data V 1BH 0027H Min (Program/Erase -DQ : Volts 1CH 0036H Max (Program/Erase) ...

Page 11

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is ...

Page 12

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory TABLE PERATING HARACTERISTICS Symbol Parameter I Active V Current DD DD Read Flash SRAM Concurrent Operation 1 Write Flash SRAM I Standby V Current 3.0V ...

Page 13

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet TABLE ECOMMENDED YSTEM Symbol Parameter 1 T Power-up to Read Operation PU-READ 1 T Power-up to Write Operation PU-WRITE 1. This ...

Page 14

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory AC CHARACTERISTICS TABLE 12: SRAM EAD YCLE Symbol Parameter T Read Cycle Time RCS T Address Access Time AAS T Bank Enable Access Time BES T ...

Page 15

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet TABLE 14 LASH EAD YCLE Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address ...

Page 16

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory ADDRESSES A MSS-0 BES1# BES2 OE# UBS#, LBS# DQ 15-0 A MSS = Most Significant SRAM Address FIGURE 3: SRAM R C EAD YCLE ADDRESSES A MSS-0 WE# BES1# ...

Page 17

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet ADDRESSES A MSS-0 WE# BES1# BES2 UBS#, LBS# DQ 15-8, DQ 7-0 Notes OE# is High during the Write cycle, the outputs ...

Page 18

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory ADDRESS A 19-0 BEF# OE WE# HIGH-Z DQ 15-0 FIGURE LASH EAD YCLE 5555 ADDRESS A 19 WE# T ...

Page 19

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet 5555 ADDRESS A 19 BEF CPH OE# WE# RY/BY# DQ 15-0 XXAA SW0 Note: X can be ...

Page 20

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory ADDRESS A 19-0 BEF# T OE# WE FIGURE 10 LASH OGGLE IT 5555 2AAA ADDRESS A 19-0 BEF# OE WE# RY/BY# DQ ...

Page 21

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet ADDRESS A 19-0 5555 2AAA BEF# OE WE# RY/BY# DQ 15-0 XXAA XX55 SW0 SW1 Note: This device also supports BEF# controlled ...

Page 22

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA BEF# OE WE# DQ 15-0 XXAA SW0 Device ID = 2761H for SST34HF1621 and 2761H for ...

Page 23

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET 5555 ADDRESS A 14-0 DQ 15-0 XXAA BEF# OE WE# SW0 Note: X can ...

Page 24

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 19 ...

Page 25

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet FIGURE 21 ORD ROGRAM ©2001 Silicon Storage Technology, Inc. Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load ...

Page 26

Page 27

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet CFI Query Entry Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX98H Address: 5555H Wait T IDA Read ...

Page 28

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load ...

Page 29

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet PRODUCT ORDERING INFORMATION Device Speed Suffix1 SST34HF16xx - XXX - XX Valid combinations for SST34HF1621 SST34HF1621-70-4C-LFP SST34HF1621-70-4C-L1P SST34HF1621-90-4C-LFP SST34HF1621-90-4C-L1P SST34HF1621-70-4E-LFP SST34HF1621-70-4E-L1P SST34HF1621-90-4E-LFP SST34HF1621-90-4E-L1P Valid ...

Page 30

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory PACKAGING DIAGRAMS TOP VIEW CORNER SIDE VIEW SEATING PLANE Note: 1. Although ...

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Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 Data Sheet TOP VIEW CORNER SIDE VIEW SEATING PLANE ...

Page 32

Mbit Concurrent SuperFlash + Mbit SRAM ComboMemory Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. SST34HF1621 / SST34HF1641 www.SuperFlash.com or www.ssti.com ...

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