SST34HF1601-70-4C-L1P SST [Silicon Storage Technology, Inc], SST34HF1601-70-4C-L1P Datasheet - Page 12

• Manufacturer Part Number: SST34HF1601-70-4C-L1P
• Description: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
• Manufacturer: SST [Silicon Storage Technology, Inc]

TABLE 8: DC O
©2001 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
I
V
V
V
V
V
V
V
V
DD
SB
ALP
RT
LI
LO
IL
ILC
IH
IHC
OLF
OHF
OLS
OHS
1. I
DD
active while Erase or Program is in progress.
Parameter
Active V
Read
Concurrent Operation
Write
Standby V
Auto Low Power Mode 3.0V
Reset
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
SRAM Output Low Voltage
SRAM Output High Voltage
Flash
SRAM
Flash
SRAM
1
V
PERATING
DD
DD
DD
Current
Current
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
Current
C
HARACTERISTICS
3.0V
3.3V
3.3V
0.7
V
V
DD
DD
Min
(V
2.2
V
-0.3
-0.2
DD
DD
= V
Limits
Max
0.8
0.3
0.2
0.4
35
20
60
40
20
40
75
40
75
30
12
DDF
1
1
AND
Units
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
DDS
Test Conditions
Address input=V
V
OE#=V
BEF#=V
BEF#=V
BEF#=V
BEF#=V
BEF#=V
V
V
All I/O=V
Reset=V
V
V
V
V
V
V
I
I
IOL =1 mA, V
IOH =-500 µA, V
OL
OH
OUT
DD
DD
DD
IN
DD
DD
DD
DD
= 2.7-3.3V)
=100 µA, V
=-100 µA, V
=GND to V
SST34HF1621 / SST34HF1641
=V
=V
=V
=V
=V
=V
= V
=GND to V
DD
DD
DD
DD
DD
DD
IL
DD
IL
IH
IH
IL
IH
, WE#=V
SS
ILC
Max, all DQs open
Max, BEF#=V
Min
Max
Max
Max
, BES1#=V
, BES1#=V
, BES1#=V
, BES1#=V
, BES1#=V
±0.3V
Max, BEF#=BES1#=V
/V
DD
IHC
DD
DD
DD
DD
=V
, V
=V
IL
DD
=V
IH
/V
, V
DD
=V
DD
DD
IH
DD
IH
IH
DD
IL ,
IL ,
IL ,
=V
, at f=1/T
Min
DD
Min
, or BES2=V
, or BES2=V
=V
Min
ILC
BES2=V
BES2=V
BES2=V
DD
Min
, WE#=V
DD
Max
Max
RC
S71172-05-000 10/01 523
IH
IH
IH
IHC
Min,
IL
IL
IHC
, BES2=V
, OE#=V
Data Sheet
,
T8.6 523
IH
ILC