SS8026T21TB SSC [Silicon Standard Corp.], SS8026T21TB Datasheet - Page 2

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SS8026T21TB

Manufacturer Part Number
SS8026T21TB
Description
1.8V 1A Positive Voltage Regulator
Manufacturer
SSC [Silicon Standard Corp.]
Datasheet
Rev.2.02 12/06/2003
Absolute Maximum Ratings
Input Voltage………………...................................................................……………………..…..…7V
Power Dissipation Internally Limited…....................................................................
Maximum Junction Temperature….......................................................……………............…..150°C
Storage Temperature Rang…........................................................................................-65°C
Lead Temperature, Time for Wave Soldering
SOT 223 Package……………….…….......................................................................………..260°C, 4s
Continuous Power Dissipation (T
SOT 89
SOT 223
TO 252
Note
Operating Conditions
Input Voltage……………………........................................................................……………..2.7V~6.5V
Temperature Range…………..........................................................................................…0°C
Electrical Characteristics
V
Output Voltage
Line Regulation
Load Regulation
Output Impedance
Quiescent Current
Ripple Rejection
Dropout Voltage
Output Current
Short Circuit Current
Over Temperature
Note 1:
Note 2:
Note3:
Note4:
IN
PARAMETER
=3.3V, I
(1)
: See Recommended Minimum Footprint
(1)
(1)
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions
are conditions under which the device functions but the specifications might not be guaranteed. For guaran-
teed specifications and test conditions see the Electrical Characteristics.
The maximum power dissipation is a function of the maximum junction temperature, T
sistance,
perature is T
go into thermal shutdown. For the SS8026 in SOT 89 package,
package,
operation in SOT 89, SOT 223, TO 252 package, can be seen in “Typical Performance Characteristics” (Safe
Operating Area).
possible.
Low duty pulse techniques are used during test to maintain junction temperatures as close to ambient as
The output capacitor should be a tantalum or aluminum type.
(1)
……………………….................................................................................................................………………………………………………….
……………………......................................................................………………..….…0.5W
……………...................................................................………...……………….…....0.8W
O
= 1A, C
JA
JA
10mA < I
3V < V
10mA < I
200mA DC and 100mA AC, fo = 120Hz
V
f
Continuous Test,
T
V
I
I
I
I
, and ambient temperature T
jmax
i
O
O
O
O
is 156°C/W; in TO 252 package,
A
IN
IN
OUT
= 120Hz,V
= 0A
= 100mA
= 500mA
= 1A
= 25°C, T
= 3.3V
-T
= 1µF, C
within 2%
A
IN
/
O
O
< 6.5V, I
JA
< 1A
< 1A
. If this dissipation is exceeded, tthe die temperature will rise above 150°C and the IC will
J
ripple
150°C,
OUT
A
=1V
= +25°C)
O
=10µF, All specifications apply for T
= 10mA
www.SiliconStandard.com
P-P
, Io = 100mA
V
V
V
IN
IN
IN
CONDITIONS
= 3V(SOT 223)
= 3.3V(SOT 223)
= 3.3V(SOT 89)
(Note 1)
(Note 1)
A
. The maximum allowable power dissipation at any ambient te m-
JA
is 125°C/W. (See recommend minimum footprint). The safe
Minimum footprint
(0.0625 square inch)
Mounted on 0.53
square inch pcb area
Mounted on 0.16
square inch pcb area
JA
is 250°C/W. For the SS8026 in SOT 223
A
= T
J
1.764
MIN
= 25°C. [Note 3]
1.800
TYP
480
660
150
0.5
1.6
1160
30
80
53
880
(Note 2)
3
1
895
950
T
T
Jmax ,
1.0W
J
J
+150°C
125°C
total thermal re-
MAX
1.845
30
50
SS8026
UNITS
m
mV
mV
mV
mA
µA
dB
°C
V
A
A
A
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