fss13a0d Intersil Corporation, fss13a0d Datasheet

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fss13a0d

Manufacturer Part Number
fss13a0d
Description
2a, 100v, 0.170 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets
Manufacturer
Intersil Corporation
Datasheet
2A, 100V, 0.170 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17696.
Ordering Information
10K
10K
100K
100K
100K
RAD LEVEL
SCREENING LEVEL
Commercial
Commercial
Space
TXV
TXV
TM
1
1-888-INTERSIL or 321-724-7143
Data Sheet
FSS13A0D1
FSS13A0D3
FSS13A0R1
FSS13A0R3
FSS13A0R4
PART NUMBER/BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
|
Intersil and Design is a trademark of Intersil Corporation.
Features
• 12A, 100V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Symbol
Packaging
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 1.5nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 3E14 Neutrons/cm
V
V
for 3E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
CAUTION: Beryllia Warning per MIL-S-19500
June 2000
DS(ON)
FSS13A0D, FSS13A0R
refer to package specifications.
G
= 0.170
TO-257AA
2
|
File Number
2
D
S
Copyright
S
D
©
G
Intersil Corporation 2000
2
with
DSS
DM
4487.3

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fss13a0d Summary of contents

Page 1

... Commercial FSS13A0R1 100K TXV FSS13A0R3 100K Space FSS13A0R4 1 1-888-INTERSIL or 321-724-7143 FSS13A0D, FSS13A0R June 2000 Features • 12A, 100V 0.170 DS(ON) • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm ...

Page 2

... g(TH 12A 15V (PLATEAU 25V 0V, ISS 1MHz C OSS C RSS FSS13A0D, FSS13A0R 100 DS 100 DGR 0. -55 to 150 J STG 300 L MIN TYP 100 ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) 100 TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 3 FSS13A0D, FSS13A0R TEST CONDITIONS I = 12A 12A, dI /dt = 100A Unless Otherwise Specified C SYMBOL TEST CONDITIONS ...

Page 4

... FIGURE 5. BASIC GATE CHARGE WAVEFORM 0.5 0.2 -1 0.1 10 0.05 0.02 0.01 SINGLE PULSE - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4 FSS13A0D, FSS13A0R Unless Otherwise Specified (Continued) 100 10 1 0.1 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 2.0 1.5 1.0 0.5 0.0 -80 FIGURE 6. NORMALIZED r NOTES: DUTY FACTOR PEAK T -3 ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 5 FSS13A0D, FSS13A0R Unless Otherwise Specified (Continued) 5 STARTING STARTING T = 150 ( (1.3 RATED DSS ...

Page 6

... Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance 6 FSS13A0D, FSS13A0R SYMBOL TEST CONDITIONS 20V GSS ...

Page 7

... Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data 7 FSS13A0D, FSS13A0R Class S - Equivalents 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 8 FSS13A0D, FSS13A0R SYMBOL Øb Øb ...

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