fss130r Intersil Corporation, fss130r Datasheet

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fss130r

Manufacturer Part Number
fss130r
Description
11a, 100v, 0.210 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets
Manufacturer
Intersil Corporation
Datasheet
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 11A, 100V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Ordering Information
Formerly available as type
Package
10K
10K
100K
100K
100K
RAD LEVEL
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 1.5nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 3E14 Neutrons/cm
V
V
for 3E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS(ON)
Commercial
TXV
Commercial
TXV
Space
SCREENING LEVEL
= 0.210
TA17636
2
|
Copyright
.
2
PART NUMBER/BRAND
FSS130D1
FSS130D3
FSS130R1
FSS130R3
FSS130R4
©
Intersil Corporation 1999
CAUTION: Beryllia Warning per MIL-S-19500
FSS130D, FSS130R
2
with
SEGR Resistant, N-Channel Power MOSFETs
DSS
refer to package specifications.
DM
TO-257AA
3-71
Description
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
S
11A, 100V, 0.210 Ohm, Rad Hard,
D
G
G
D
S
File Number
4059.2

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fss130r Summary of contents

Page 1

... Package CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications ...

Page 2

... g(TH =11A 15V (PLATEAU 25V 0V, ISS 1MHz C OSS C RSS 3-72 FSS130D, FSS130R UNITS 100 DS 100 DGR 0. -55 to 150 J STG 300 L MIN ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) 100 TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FSS130D, FSS130R TEST CONDITIONS I = 11A 11A, dI /dt = 100A Unless Otherwise Specified C SYMBOL TEST CONDITIONS 1mA ...

Page 4

... CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE FSS130D, FSS130R Unless Otherwise Specified (Continued OPERATION IN THIS AREA MAY BE LIMITED 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2 ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FSS130D, FSS130R Unless Otherwise Specified (Continued) STARTING STARTING T = 150 ( (1.3 RATED DSS DD ...

Page 6

... Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance FSS130D, FSS130R SYMBOL TEST CONDITIONS 20V GSS GS I ...

Page 7

... Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report FSS130D, FSS130R E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 FSS130D, FSS130R SYMBOL MIN A 0.190 A ...

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