fss23a4r Intersil Corporation, fss23a4r Datasheet

fss23a4r

Manufacturer Part Number

fss23a4r

Description

7a, 250v, 0.460 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets

Manufacturer

Intersil Corporation

Datasheet

1.FSS23A4R.pdf (8 pages)

Current page: 1 of 8
Download datasheet (56Kb)

June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 7A, 250V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Formerly available as type TA17698.

Package

10K

100K

RAD LEVEL

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 4nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 1E14 Neutrons/cm

for 1E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

= 0.460

FSS23A4D1

FSS23A4D3

FSS23A4R1

FSS23A4R3

FSS23A4R4

PART NUMBER/BRAND

Intersil Corporation 1999

CAUTION: Beryllia Warning per MIL-S-19500

with

SEGR Resistant, N-Channel Power MOSFETs

DSS

refer to package speciﬁcations.

TO-257AA

3-65

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

7A, 250V, 0.460 Ohm, Rad Hard,

FSS23A4D,

FSS23A4R

File Number

4484.1

Related parts for fss23a4r

fss23a4r Summary of contents

Page 1

... MIL-S-19500. Contact Intersil for any desired deviations PART NUMBER/BRAND from the data sheet. FSS23A4D1 Symbol FSS23A4D3 FSS23A4R1 FSS23A4R3 FSS23A4R4 TO-257AA S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package speciﬁcations. © Intersil Corporation 1999 3-65 FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard File Number 4484.1 ...

Page 2

... g(TH 7A 15V (PLATEAU 25V 0V, ISS 1MHz C OSS C RSS 3-66 FSS23A4D, FSS23A4R UNITS 250 DS 250 DGR 0. -55 to 150 J STG 300 L MIN TYP ...

Page 3

... LET = 37MeV/mg/cm , RANGE = 36 300 2 FLUENCE = 1E5 IONS/cm (TYPICAL) 200 100 o TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FSS23A4D, FSS23A4R TEST CONDITIONS 7A, dI /dt = 100A Unless Otherwise Speciﬁed C SYMBOL TEST CONDITIONS ...

Page 4

... SINGLE PULSE - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE FSS23A4D, FSS23A4R Unless Otherwise Speciﬁed (Continued 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY r 0.01 1 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, V 2.0 1.5 1.0 ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FSS23A4D, FSS23A4R Unless Otherwise Speciﬁed (Continued) STARTING T o STARTING T = 150 ( (1.3 RATED DSS ...

Page 6

... Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance FSS23A4D, FSS23A4R SYMBOL TEST CONDITIONS 20V GSS GS I ...

Page 7

... Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report FSS23A4D, FSS23A4R E. Preconditioning Attributes Data Sheet F. Group A G. Group B H. Group C I. Group D 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certiﬁ ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Ofﬁce Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 FSS23A4D, FSS23A4R SYMBOL MIN A 0.190 A ...

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