fss230r Intersil Corporation, fss230r Datasheet

fss230r

Manufacturer Part Number

fss230r

Description

8a, 200v, 0.440 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets

Manufacturer

Intersil Corporation

Datasheet

1.FSS230R.pdf (8 pages)

Current page: 1 of 8
Download datasheet (56Kb)

June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 8A, 200V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Formerly available as type TA17637.

Package

10K

100K

RAD LEVEL

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 3.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 1E14 Neutrons/cm

for 1E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

= 0.440

FSS230D1

FSS230D3

FSS230R1

FSS230R3

FSS230R4

PART NUMBER/BRAND

Intersil Corporation 1999

CAUTION: Beryllia Warning per MIL-S-19500

FSS230D, FSS230R

with

SEGR Resistant, N-Channel Power MOSFETs

DSS

refer to package speciﬁcations.

TO-257AA

3-77

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

8A, 200V, 0.440 Ohm, Rad Hard,

File Number

4054.2

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