ST2301MSRG STANSON [Stanson Technology], ST2301MSRG Datasheet

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ST2301MSRG

Manufacturer Part Number
ST2301MSRG
Description
P Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
1.ST2301MSRG.pdf (7 pages)
DESCRIPTION
The ST2301M is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
PART MARKING
SOT-23
ORDERING INFORMATION
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Y: Year Code
※ ST2301MSRG
※ Process Code : A ~ Z ; a ~ z
1.Gate
Part Number
ST2301MSRG
G
1
1
S01YA
2.Source
D
3
3
A: Process Code
S : SOT-23 ; R : Tape Reel ; G : Pb – Free
S
2
2
3.Drain
Package
SOT-23
1
FEATURE
P Channel Enhancement Mode MOSFET
extremely low R
DC current capability
-20V/-2.8A, R
-20V/-2.0A, R
Super high density cell design for
Exceptional on-resistance and maximum
SOT-23 package design
DS(ON)
DS(ON)
Part Marking
ST2301M
DS(ON)
S01YA
= 130m-ohm (Typ.)
= 220m-ohm
ST2301M 2007. V1
@V
@V
GS
GS
= -4.5V
= -2.5V
-3.0A

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ST2301MSRG Summary of contents

Page 1

... SOT-23 3 S01YA Year Code A: Process Code ORDERING INFORMATION Part Number ST2301MSRG ※ Process Code : ※ ST2301MSRG S : SOT- Tape Reel ; – Free 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET FEATURE -20V/-2.8A, R DS(ON) -20V/-2.0A, R DS(ON) ...

Page 2

ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150 ℃ ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to ...

Page 3

ELECTRICAL CHARACTERISTICS ( ℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate ...

Page 4

TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 4 ST2301M 2007. V1 -3.0A ...

Page 5

TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 5 ST2301M 2007. V1 -3.0A ...

Page 6

TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 6 ST2301M 2007. V1 -3.0A ...

Page 7

SOT-23 PACKAGE OUTLINE 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 7 ST2301M 2007. V1 -3.0A ...

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