SI2200-X-GM SILABS [Silicon Laboratories], SI2200-X-GM Datasheet - Page 4
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SI2200-X-GM
Manufacturer Part Number
SI2200-X-GM
Description
RF SYNTHESIZER WITH INTEGRATED VCOS INTEGRATED VCOS
Manufacturer
SILABS [Silicon Laboratories]
Datasheet
1.SI2200-X-GM.pdf
(30 pages)
Si2200
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Ambient Operating Temperature
Ambient Functional Temperature
Supply Voltage
Supply Voltages Difference
Notes:
Parameter
DC Supply Voltage
Input Current
Input Voltage
Storage Temperature Range
Notes:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
2. Minimum and maximum specifications are not guaranteed across the functional temperature range.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this
3. For signals SCLK, SDATA, SEN, PWDN, and XIN.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
device should only be done at ESD-protected workstations.
3
3
Parameter
Symbol
1,2
V
V
T
T
DD
A
F
∆
Symbol
V
T
V
I
STG
DD
IN
IN
Rev. 1.0
1,2
Test Condition
(V
(V
DDR
DDI
– V
– V
DDD
DDD
–0.3 to V
),
)
–0.5 to 4.0
–55 to 150
Value
±10
–0.3
DD
Min
–40
–40
2.9
+0.3
Typ
3.3
25
25
—
Max
3.6
0.3
85
95
Unit
mA
o
V
V
C
Unit
°C
°C
V
V