SI1032R-T1 VISHAY [Vishay Siliconix], SI1032R-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1032R-T1
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si1032R/X
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (T
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
0.5
0.4
0.3
0.2
0.1
0.0
0
b
Parameter
1
V
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
a
2
a
A
a
a
3
= 25_C UNLESS OTHERWISE NOTED)
V
GS
4
= 5 thru 1.8 V
Symbol
V
r
r
5
I
DS(on)
t
I
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
GSS
DSS
DSS
g
Q
SD
t
t
A
fs
gs
gd
r
f
1 V
g
= 25_C UNLESS NOTED)
6
I
V
D
DS
^ 200 mA, V
V
DS
= 10 V, V
V
V
V
V
= 20 V, V
V
V
I
GS
V
V
GS
GS
V
V
V
V
S
DS
DS
DS
Test Condition
DS
DS
DS
DS
DD
DD
= 150 mA, V
= 1.8 V, I
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= 1.5 V, I
= V
= 5 V, V
= 0 V, V
= 0 V, V
= 20 V, V
= 10 V, R
= 10 V, R
GS
GEN
GS
GS
= 4.5 V, I
, I
= 0 V, T
D
D
D
= 4.5 V, R
GS
GS
D
GS
D
D
GS
= 250 mA
= 175 m A
= 200 mA
L
L
= 150 m A
GS
= 200 mA
= 40 mA
= 4.5 V
= 47 W
= 47 W
= "2.8 V
= "4.5 V
= 0 V
= 0 V
D
J
600
500
400
300
200
100
= 150 mA
= 55_C
G
0
0.0
= 10 W
0.5
V
GS
Transfer Characteristics
Min
0.40
250
− Gate-to-Source Voltage (V)
1.0
T
J
"0.5
"1.0
Typ
= −55_C
750
225
0.7
0.5
75
S-40574—Rev. C, 29-Mar-04
1.5
Document Number: 71172
Max
"1.0
"3.0
1.2
1.2
10
10
50
25
50
25
1
5
7
9
125_C
2.0
25_C
Unit
mA
mA
mA
pC
ns
ns
V
W
W
S
V
2.5