SUM110P06-07L_08 VISHAY [Vishay Siliconix], SUM110P06-07L_08 Datasheet
SUM110P06-07L_08
Related parts for SUM110P06-07L_08
SUM110P06-07L_08 Summary of contents
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... DS DS(on) 0.0069 0.0088 4 TO-263 Top View Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy Power Dissipation ...
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... SUM110P06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... °C C 0.014 25 °C 0.012 0.010 125 °C 0.008 0.006 0.004 0.002 0.000 iss SUM110P06-07L Vishay Siliconix 200 160 120 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 ...
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... Document Number: 72439 S-80274-Rev. C, 11-Feb-08 1000 100 10 1 0.1 0.1 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110P06-07L Vishay Siliconix Limited on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...