ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
SURMOUNT
RoHS
Features
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This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM’s patented HMIC
This device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed on the
top of one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization is
applied producing a surface mount device. This vertical
topology provides for exceptional heat transfer. The
topside is fully encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact protection.
These protective coatings prevent damage to the junction
and the anode air-bridge during handling and assembly.
These packageless devices are suitable for moderate
incident power applications, ≤ 10W/C.W. or where the
peak power is ≤ 50W, pulse width is ≤ 1μS, and duty cycle
is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant
choice for higher frequency switch elements when
compared to their plastic package counterparts.
MADP-042XX5-13060 Series
1. Exceeding these limits may cause permanent damage.
C.W. Incident Power dBm
Absolute Maximum Ratings
Operating Temperature
MADP-042…-13060
Mounting Temperature
Junction Temperature
Storage Temperature
Surface Mount
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
High Average and Peak Power Handling
RoHS Compliant
Reverse Voltage
Forward Current
Parameter
(unless otherwise specified)
TM
PIN Diodes:
Applications
Description
,
make these devices a superior
305
40
Absolute Maximum
+280°C for 10 seconds
-55°C to +125°C
-55°C to +150°C
405
44
1
250 mA
+175°C
@ T
-80 V
AMB
505
43
TM
= +25°C
process.
905
35
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
Notes:
1. Backside metal: 0.1 μM thick.
2. Yellow hatched areas indicate backside ohmic gold contacts.
3. All devices have the same outline dimensions ( A to G).
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
DIM
Visit www.macom.com for additional data sheets and product information.
G
A
B
C
D
E
F
0.040
0.021
0.004
0.013
0.011
0.013
0.019
MIN
INCHES
D
MAX
0.042
0.023
0.008
0.015
0.013
0.015
0.021
E
M/A-COM Products
1.025
0.525
0.102
0.325
0.275
0.325
0.475
MIN
F
MM
G
MAX
1.075
0.575
0.203
0.375
0.325
0.375
0.525
Rev. V5